- AutorIn
- Holger von Wenckstern
- Daniel Thomas Splith
- Florian Schmidt
- Prof. Dr. Marius Grundmann
- Dr. Oliver Bierwagen
- Prof. Dr. James S. Speck
- Titel
- Schottky contacts to In2O3
- Zitierfähige Url:
- https://nbn-resolving.org/urn:nbn:de:bsz:15-qucosa-143976
- Quellenangabe
- APL Materials 2, 046104 (2014) doi: 10.1063/1.4870536
- Erstveröffentlichung
- 2014
- Abstract (EN)
- n-type binary compound semiconductors such as InN, InAs, or In2O3 are especial because the branch-point energy or charge neutrality level lies within the conduction band. Their tendency to form a surface electron accumulation layer prevents the formation of rectifying Schottky contacts. Utilizing a reactive sputtering process in an oxygen-containing atmosphere, we demonstrate Schottky barrier diodes on indium oxide thin films with rectifying properties being sufficient for space charge layer spectroscopy. Conventional non-reactive sputtering resulted in ohmic contacts. We compare the rectification of Pt, Pd, and Au Schottky contacts on In2O3 and discuss temperature-dependent current-voltage characteristics of Pt/In2O3 in detail. The results substantiate the picture of oxygen vacancies being the source of electrons accumulating at the surface, however, the position of the charge neutrality level and/or the prediction of Schottky barrier heights from it are questioned.
- Andere Ausgabe
- Link zur Originalpublikation in der Zeitschrift APL materials
Link: http://dx.doi.org/10.1063/1.4870536 - Freie Schlagwörter (DE)
- Ozon, Schottky-Barriere, Indiumoxid
- Freie Schlagwörter (EN)
- Ozone, Schottky barriers, indium oxide, Metal to metal contacts
- Klassifikation (DDC)
- 530
- Herausgeber (Institution)
- Universität Leipzig
- Paul-Drude-Institut für Festkörperelektronik
- University of California
- Verlag
- AIP Publ., Melville, NY
- Förder- / Projektangaben
- URN Qucosa
- urn:nbn:de:bsz:15-qucosa-143976
- Veröffentlichungsdatum Qucosa
- 27.05.2014
- Dokumenttyp
- Artikel
- Sprache des Dokumentes
- Englisch