- AutorIn
- Frank Wirbeleit
- Titel
- Non-gaussian diffusion model for phosphorus in silicon heavy-doped junctions
- Zitierfähige Url:
- https://nbn-resolving.org/urn:nbn:de:bsz:15-qucosa-192802
- Quellenangabe
- Diffusion fundamentals - 9
- Quellenangabe
- Diffusion fundamentals 9 (2009) 5, S. 1-7
- Erstveröffentlichung
- 2009
- Abstract (EN)
- Besides common implant techniques, dopant diffusion enables steep diffusion profiles in heavily doped deep-source drain and ultra-shallow junctions as required in advanced microelectronic technology. Experimental phosphorus dopant diffusion profiles in silicon are described by a rational function diffusion (RFD) model, based on direct solution of Fick’s equations and suitable for actual work in junction engineering.
- Freie Schlagwörter (DE)
- Diffusion, Transport
- Freie Schlagwörter (EN)
- diffusion, transport
- Klassifikation (DDC)
- 530
- Herausgeber (Institution)
- Globalfoundries
- Universität Leipzig
- URN Qucosa
- urn:nbn:de:bsz:15-qucosa-192802
- Veröffentlichungsdatum Qucosa
- 04.01.2016
- Dokumenttyp
- Artikel
- Sprache des Dokumentes
- Englisch