- AutorIn
- Zhipeng Zhang
- Holger von Wenckstern
- Jörg Lenzner
- Michael Lorenz
- Marius Grundmann
- Titel
- Visible-blind and solar-blind ultraviolet photodiodes based on (InxGa1-x)2O3
- Zitierfähige Url:
- https://nbn-resolving.org/urn:nbn:de:bsz:15-qucosa2-235470
- Quellenangabe
- Applied Physics Letters Erscheinungsort: Melville
Verlag: American Institute of Physics
Erscheinungsjahr: 2016
Jahrgang: 108
Heft: 12
ISSN: 0003-6951
E-ISSN: 1077-3118
Artikelnummer: 123503 - Erstveröffentlichung
- 2016
- Abstract (EN)
- UV and deep-UV selective photodiodes from visible-blind to solar-blind were realized based on a Si-doped (InxGa1–x)2O3 thin film with a monotonic lateral variation of 0.0035<x<0.83. Such layer was deposited by employing a continuous composition spread approach relying on the ablation of a single segmented target in pulsed-laser deposition. The photo response signal is provided from a metal-semiconductor-metal structure upon backside illumination. The absorption onset was tuned from 4.83 to 3.22 eV for increasing x. Higher responsivities were observed for photodiodes fabricated from indium-rich part of the sample, for which an internal gain mechanism could be identified. VC 2016 AIP Publishing LLC.
- Andere Ausgabe
- Link zur Originalpublikation in Applied Physics Letters
Link: http://dx.doi.org/10.1063/1.4944860 - Freie Schlagwörter (EN)
- Thin film composition, Thin film growth, Rectification, Pulsed laser deposition, Ultraviolet light
- Klassifikation (DDC)
- 530
- Verlag
- American Institute of Physics, Melville
- Publizierende Institution
- Universität Leipzig, Leipzig
- Version / Begutachtungsstatus
- publizierte Version / Verlagsversion
- URN Qucosa
- urn:nbn:de:bsz:15-qucosa2-235470
- Veröffentlichungsdatum Qucosa
- 06.08.2018
- Dokumenttyp
- Artikel
- Sprache des Dokumentes
- Englisch