- AutorIn
- Florian Schmidt
- Stefan Müller
- Holger von Wenckstern
- Gabriele Benndorf
- Rainer Pickenhain
- Marius Grundmann
- Titel
- Impact of strain on electronic defects in (Mg,Zn)O thin films
- Zitierfähige Url:
- https://nbn-resolving.org/urn:nbn:de:bsz:15-qucosa2-311925
- Quellenangabe
- Journal of Applied Physics Erscheinungsort: Melville
Verlag: American Institute of Physics
Erscheinungsjahr: 2014
Jahrgang: 116
Heft: 10
ISSN: 0021-8979
E-ISSN: 1089-7550
Artikelnummer: 103703 - Erstveröffentlichung
- 2014
- Abstract (EN)
- We have investigated the impact of strain on the incorporation and the properties of extended and point defects in (Mg,Zn)O thin films by means of photoluminescence, X-ray diffraction, deep-level transient spectroscopy (DLTS), and deep-level optical spectroscopy. The recombination line Y2, previously detected in ZnO thin films grown on an Al-doped ZnO buffer layer and attributed to tensile strain, was exclusively found in (Mg,Zn)O samples being under tensile strain and is absent in relaxed or compressively strained thin films. Furthermore a structural defect E3′ can be detected via DLTS measurements and is only incorporated in tensile strained samples. Finally it is shown that the omnipresent deep-level E3 in ZnO can only be optically recharged in relaxed ZnO samples.
- Andere Ausgabe
- Link zur Originalpublikation in Journal of Applied Physics
Link: http://dx.doi.org/10.1063/1.4894841 - Freie Schlagwörter (EN)
- Buffer layers, Zinc oxide films, Photoluminescence, Lattice constants
- Klassifikation (DDC)
- 530
- Verlag
- American Institute of Physics, Melville
- Publizierende Institution
- Universität Leipzig, Leipzig
- Version / Begutachtungsstatus
- publizierte Version / Verlagsversion
- URN Qucosa
- urn:nbn:de:bsz:15-qucosa2-311925
- Veröffentlichungsdatum Qucosa
- 09.08.2018
- Dokumenttyp
- Artikel
- Sprache des Dokumentes
- Englisch