- AutorIn
- Stefan Müller
- Holger von Wenckstern
- Florian Schmidt
- Daniel Splith
- Robert Heinhold
- Martin Allen
- Marius Grundmann
- Titel
- Method of choice for fabrication of high-quality ZnO-based Schottky diodes
- Zitierfähige Url:
- https://nbn-resolving.org/urn:nbn:de:bsz:15-qucosa2-312107
- Quellenangabe
- Journal of Applied Physics Erscheinungsort: Melville
Verlag: American Institute of Physics
Erscheinungsjahr: 2014
Jahrgang: 116
Heft: 19
ISSN: 0021-8979
E-ISSN: 1089-7550
Artikelnummer: 194506 - Erstveröffentlichung
- 2014
- Abstract (EN)
- We present a comprehensive comparison of electrical properties of differently fabricated high quality Schottky contacts on ZnO thin films grown by pulsed laser deposition. Thermally evaporated Pd/ZnO Schottky contacts exhibit ideality factors as low as 1.06 due to their high lateral homogeneity. The effective Richardson constant determined using these homogeneous contacts is (7.7±4.8)A cm−2 K−2 close to the theoretical value of 32 A cm−2 K−2. However, their rectification ratio is at most five orders of magnitude due to their comparably small barrier height (≈0.7eV). The largest effective barrier height (1.11 eV) and rectification ratio(7×1010) was obtained for reactively sputtered PdOx/ZnO Schottky contacts. Eclipse pulsed laser deposited IrOx/ZnO Schottky contacts were found to combine very good lateral homogeneity (n≈1.1), with a reasonably large barrier height (0.96 eV) and large rectification ratio (≈9 orders of magnitude). Our results for differently fabricated Schottky contacts suggest that the barrier formation is highly dependent on the presence of oxygen vacancies close to the interface and the different compensation mechanisms involved.
- Andere Ausgabe
- Link zur Originalpublikation in Journal of Applied Physics
Link: http://dx.doi.org/10.1063/1.4901637 - Freie Schlagwörter (EN)
- Single crystals, Temperature measurement, Sputtering
- Klassifikation (DDC)
- 530
- Verlag
- American Institute of Physics, Melville
- Publizierende Institution
- Universität Leipzig, Leipzig
- Version / Begutachtungsstatus
- publizierte Version / Verlagsversion
- URN Qucosa
- urn:nbn:de:bsz:15-qucosa2-312107
- Veröffentlichungsdatum Qucosa
- 11.08.2018
- Dokumenttyp
- Artikel
- Sprache des Dokumentes
- Englisch