- AutorIn
- Fabian J. Klüpfel
- Holger von Wenckstern
- Marius Grundmann
- Titel
- Low frequency noise of ZnO based metal-semiconductor field-effect transistors
- Zitierfähige Url:
- https://nbn-resolving.org/urn:nbn:de:bsz:15-qucosa2-312245
- Quellenangabe
- Applied Physics Letters Erscheinungsort: Melville
Verlag: American Institute of Physics
Erscheinungsjahr: 2015
Jahrgang: 106
Heft: 3
ISSN: 0003-6951
E-ISSN: 1077-3118
Artikelnummer: 033502 - Erstveröffentlichung
- 2015
- Abstract (EN)
- The low frequency noise of metal-semiconductor field-effect transistors (MESFETs) based on ZnO:Mg thin films grown by pulsed laser deposition on a-plane sapphire was investigated. In order to distinguish between noise generation in the bulk channel material, at the semiconductor surface, and at the gate/channel interface, ohmic ZnO channels without gate were investigated in detail, especially concerning the dependency of the noise on geometrical variations. The experiments suggest that the dominating 1/f noise in the frequency range below 1 kHz is generated within the bulk channel material, both for bare ZnO channels and MESFETs.
- Andere Ausgabe
- Link zur Originalpublikation in Applied Physics Letters
Link: http://dx.doi.org/10.1063/1.4906292 - Freie Schlagwörter (EN)
- Zinc oxide films, Carrier mobility, Amplifiers
- Klassifikation (DDC)
- 530
- Verlag
- American Institute of Physics, Melville
- Publizierende Institution
- Universität Leipzig, Leipzig
- Version / Begutachtungsstatus
- publizierte Version / Verlagsversion
- URN Qucosa
- urn:nbn:de:bsz:15-qucosa2-312245
- Veröffentlichungsdatum Qucosa
- 14.08.2018
- Dokumenttyp
- Artikel
- Sprache des Dokumentes
- Englisch