- AutorIn
- Rami Khazaka
- Marius Grundmann
- Marc Portail
- Philippe Vennéguès
- Marcin Zielinski
- Thierry Chassagne
- Daniel Alquier
- Jean-François Michaud
- Titel
- Realization of minimum number of rotational domains in heteroepitaxied Si(110) on 3C-SiC( 001)
- Zitierfähige Url:
- https://nbn-resolving.org/urn:nbn:de:bsz:15-qucosa2-312288
- Quellenangabe
- Applied Physics Letters Erscheinungsort: Melville
Verlag: American Institute of Physics
Erscheinungsjahr: 2016
Jahrgang: 108
Heft: 1
ISSN: 0003-6951
E-ISSN: 1077-3118
Artikelnummer: 011608 - Erstveröffentlichung
- 2016
- Abstract (EN)
- Structural and morphological characterization of a Si(110) film heteroepitaxied on 3C-SiC(001)/ Si(001) on-axis template by chemical vapor deposition has been performed. An antiphase domain (APD) free 3C-SiC layer was used showing a roughness limited to 1 nm. This leads to a smooth Si film with a roughness of only 3 nm for a film thickness of 400 nm. The number of rotation domains in the Si(110) epilayer was found to be two on this APD-free 3C-SiC surface. This is attributed to the in-plane azimuthal misalignment of the mirror planes between the two involved materials. We prove that fundamentally no further reduction of the number of domains can be expected for the given substrate. We suggest the necessity to use off-axis substrates to eventually favor a single domain growth.
- Andere Ausgabe
- Link zur Originalpublikation in Applied Physics Letters
Link: http://dx.doi.org/10.1063/1.4939692 - Freie Schlagwörter (EN)
- Calabi Yau theory, Atomic force microscopy, Mirrors
- Klassifikation (DDC)
- 530
- Verlag
- American Institute of Physics, Melville
- Publizierende Institution
- Universität Leipzig, Leipzig
- Sonstige beteiligte Institution
- Université François Rabelais, Tours
- Version / Begutachtungsstatus
- publizierte Version / Verlagsversion
- URN Qucosa
- urn:nbn:de:bsz:15-qucosa2-312288
- Veröffentlichungsdatum Qucosa
- 14.08.2018
- Dokumenttyp
- Artikel
- Sprache des Dokumentes
- Englisch