BO-Related Defects : Overcoming Bulk Lifetime Degradation in Crystalline Si by Regeneration

Lade...
Vorschaubild
Dateien
Hahn_0-322951.pdf
Hahn_0-322951.pdfGröße: 1.97 MBDownloads: 563
Datum
2016
Herausgeber:innen
Kontakt
ISSN der Zeitschrift
Electronic ISSN
ISBN
Bibliografische Daten
Verlag
Schriftenreihe
Auflagebezeichnung
ArXiv-ID
Internationale Patentnummer
Angaben zur Forschungsförderung
Projekt
Open Access-Veröffentlichung
Open Access Green
Sammlungen
Core Facility der Universität Konstanz
Gesperrt bis
Titel in einer weiteren Sprache
Forschungsvorhaben
Organisationseinheiten
Zeitschriftenheft
Publikationstyp
Zeitschriftenartikel
Publikationsstatus
Published
Erschienen in
Solid State Phenomena. 2016, 242, pp. 80-89. ISSN 0377-6883. eISSN 1662-9779. Available under: doi: 10.4028/www.scientific.net/SSP.242.80
Zusammenfassung

Boron-oxygen related defects formed under working conditions of a c-Si solar cell can be a showstopper for new cell concepts enabling higher conversion efficiencies. The recombination activity of these defects can be reduced to negligible values by a regeneration process under elevated temperatures and in the presence of excess charge carriers in the Si bulk. It is shown that this process also relies on the presence of H in the c-Si bulk. Regeneration kinetics can be sped up by higher temperatures, higher concentrations of excess charge carriers and higher H concentration in the c-Si bulk. But care has to be taken to avoid a destabilization reaction taking place at higher temperature, resulting in the BO-related defects being again present in the recombination-active state. A 3-state model with the corresponding reaction rates between the different defects states describes the experimental findings and can be used for predictions of an optimized regeneration process.

Zusammenfassung in einer weiteren Sprache
Fachgebiet (DDC)
530 Physik
Schlagwörter
crystalline Si, solar cell, boron-oxygen, defect, regeneration, hydrogen
Konferenz
Rezension
undefined / . - undefined, undefined
Zitieren
ISO 690HAHN, Giso, Svenja WILKING, Axel HERGUTH, 2016. BO-Related Defects : Overcoming Bulk Lifetime Degradation in Crystalline Si by Regeneration. In: Solid State Phenomena. 2016, 242, pp. 80-89. ISSN 0377-6883. eISSN 1662-9779. Available under: doi: 10.4028/www.scientific.net/SSP.242.80
BibTex
@article{Hahn2016BORel-33190,
  year={2016},
  doi={10.4028/www.scientific.net/SSP.242.80},
  title={BO-Related Defects : Overcoming Bulk Lifetime Degradation in Crystalline Si by Regeneration},
  volume={242},
  issn={0377-6883},
  journal={Solid State Phenomena},
  pages={80--89},
  author={Hahn, Giso and Wilking, Svenja and Herguth, Axel}
}
RDF
<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/33190">
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2016-03-02T10:46:00Z</dcterms:available>
    <dc:creator>Herguth, Axel</dc:creator>
    <dc:contributor>Wilking, Svenja</dc:contributor>
    <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/33190"/>
    <dcterms:title>BO-Related Defects : Overcoming Bulk Lifetime Degradation in Crystalline Si by Regeneration</dcterms:title>
    <dc:creator>Hahn, Giso</dc:creator>
    <dc:contributor>Herguth, Axel</dc:contributor>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dc:language>eng</dc:language>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:rights>terms-of-use</dc:rights>
    <dc:creator>Wilking, Svenja</dc:creator>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/33190/3/Hahn_0-322951.pdf"/>
    <dcterms:issued>2016</dcterms:issued>
    <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/>
    <dcterms:abstract xml:lang="eng">Boron-oxygen related defects formed under working conditions of a c-Si solar cell can be a showstopper for new cell concepts enabling higher conversion efficiencies. The recombination activity of these defects can be reduced to negligible values by a regeneration process under elevated temperatures and in the presence of excess charge carriers in the Si bulk. It is shown that this process also relies on the presence of H in the c-Si bulk. Regeneration kinetics can be sped up by higher temperatures, higher concentrations of excess charge carriers and higher H concentration in the c-Si bulk. But care has to be taken to avoid a destabilization reaction taking place at higher temperature, resulting in the BO-related defects being again present in the recombination-active state. A 3-state model with the corresponding reaction rates between the different defects states describes the experimental findings and can be used for predictions of an optimized regeneration process.</dcterms:abstract>
    <dc:contributor>Hahn, Giso</dc:contributor>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/33190/3/Hahn_0-322951.pdf"/>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2016-03-02T10:46:00Z</dc:date>
  </rdf:Description>
</rdf:RDF>
Interner Vermerk
xmlui.Submission.submit.DescribeStep.inputForms.label.kops_note_fromSubmitter
Kontakt
URL der Originalveröffentl.
Prüfdatum der URL
Prüfungsdatum der Dissertation
Finanzierungsart
Kommentar zur Publikation
Allianzlizenz
Corresponding Authors der Uni Konstanz vorhanden
Internationale Co-Autor:innen
Universitätsbibliographie
Ja
Begutachtet
Diese Publikation teilen