Contact formation on p-doped Si by screen-printing pure Ag pastes for bifacial n-type Si solar cells

Lade...
Vorschaubild
Dateien
Engelhardt_0-374860.pdf
Engelhardt_0-374860.pdfGröße: 422.45 KBDownloads: 103
Datum
2016
Herausgeber:innen
Kontakt
ISSN der Zeitschrift
Electronic ISSN
ISBN
Bibliografische Daten
Verlag
Schriftenreihe
Auflagebezeichnung
ArXiv-ID
Internationale Patentnummer
Angaben zur Forschungsförderung
Projekt
Open Access-Veröffentlichung
Open Access Green
Sammlungen
Core Facility der Universität Konstanz
Gesperrt bis
Titel in einer weiteren Sprache
Forschungsvorhaben
Organisationseinheiten
Zeitschriftenheft
Publikationstyp
Beitrag zu einem Konferenzband
Publikationsstatus
Published
Erschienen in
Proceedings of 32nd EU PVSEC. München: WIP, 2016, pp. 647-650. ISBN 3-936338-41-8. Available under: doi: 10.4229/EUPVSEC20162016-2AV.1.29
Zusammenfassung

n-type solar cell concepts increasingly utilize emitter formation by diffusion from boron doped sources. Combining the advantage of n-type silicon material and bifacial cell architecture enables high-efficiency and versatile photovoltaics. In case of boron emitters, it was standard until now to form a metal-semiconductor contact by screenprinting Al containing Ag pastes. Instead of utilizing Al to enable Ag to form a sufficient contact with the risk in loss of VOC and FF, different glass compositions for pure Ag pastes were developed to form a contact with low impact on cell efficiency. In direct comparison this method in the first try already surpasses the performance of commercial Al containing Ag pastes in direct comparison. The experimental pastes show a distinctive gain in solar cell characteristics in contrast to commercial pure Ag pastes. In this case we reached an overall efficiency of 18.6% using pure Ag pastes. Contact resistivity values thereby range below 1-2 mcm² comparable to pure Ag pastes on n-type emitters and Ag/Al pastes on p-type emitters.

Zusammenfassung in einer weiteren Sprache
Fachgebiet (DDC)
530 Physik
Schlagwörter
Konferenz
32nd European Photovoltaic Solar Energy Conference and Exhibition, 20. Juni 2016 - 24. Juni 2016, Munich
Rezension
undefined / . - undefined, undefined
Zitieren
ISO 690ENGELHARDT, Josh, Susanne FRITZ, Erkan EMRE, Giso HAHN, 2016. Contact formation on p-doped Si by screen-printing pure Ag pastes for bifacial n-type Si solar cells. 32nd European Photovoltaic Solar Energy Conference and Exhibition. Munich, 20. Juni 2016 - 24. Juni 2016. In: Proceedings of 32nd EU PVSEC. München: WIP, 2016, pp. 647-650. ISBN 3-936338-41-8. Available under: doi: 10.4229/EUPVSEC20162016-2AV.1.29
BibTex
@inproceedings{Engelhardt2016Conta-36556,
  year={2016},
  doi={10.4229/EUPVSEC20162016-2AV.1.29},
  title={Contact formation on p-doped Si by screen-printing pure Ag pastes for bifacial n-type Si solar cells},
  isbn={3-936338-41-8},
  publisher={WIP},
  address={München},
  booktitle={Proceedings of 32nd EU PVSEC},
  pages={647--650},
  author={Engelhardt, Josh and Fritz, Susanne and Emre, Erkan and Hahn, Giso}
}
RDF
<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/36556">
    <dc:language>eng</dc:language>
    <dc:rights>terms-of-use</dc:rights>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/>
    <dc:creator>Emre, Erkan</dc:creator>
    <dc:contributor>Engelhardt, Josh</dc:contributor>
    <dc:contributor>Hahn, Giso</dc:contributor>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:creator>Hahn, Giso</dc:creator>
    <dc:creator>Fritz, Susanne</dc:creator>
    <dc:contributor>Fritz, Susanne</dc:contributor>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dc:contributor>Emre, Erkan</dc:contributor>
    <dcterms:issued>2016</dcterms:issued>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2017-01-10T15:32:59Z</dc:date>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2017-01-10T15:32:59Z</dcterms:available>
    <dcterms:title>Contact formation on p-doped Si by screen-printing pure Ag pastes for bifacial n-type Si solar cells</dcterms:title>
    <dc:creator>Engelhardt, Josh</dc:creator>
    <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/36556/3/Engelhardt_0-374860.pdf"/>
    <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/36556/3/Engelhardt_0-374860.pdf"/>
    <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/36556"/>
    <dcterms:abstract xml:lang="eng">n-type solar cell concepts increasingly utilize emitter formation by diffusion from boron doped sources. Combining the advantage of n-type silicon material and bifacial cell architecture enables high-efficiency and versatile photovoltaics. In case of boron emitters, it was standard until now to form a metal-semiconductor contact by screenprinting Al containing Ag pastes. Instead of utilizing Al to enable Ag to form a sufficient contact with the risk in loss of VOC and FF, different glass compositions for pure Ag pastes were developed to form a contact with low impact on cell efficiency. In direct comparison this method in the first try already surpasses the performance of commercial Al containing Ag pastes in direct comparison. The experimental pastes show a distinctive gain in solar cell characteristics in contrast to commercial pure Ag pastes. In this case we reached an overall efficiency of 18.6% using pure Ag pastes. Contact resistivity values thereby range below 1-2 mcm² comparable to pure Ag pastes on n-type emitters and Ag/Al pastes on p-type emitters.</dcterms:abstract>
  </rdf:Description>
</rdf:RDF>
Interner Vermerk
xmlui.Submission.submit.DescribeStep.inputForms.label.kops_note_fromSubmitter
Kontakt
URL der Originalveröffentl.
Prüfdatum der URL
Prüfungsdatum der Dissertation
Finanzierungsart
Kommentar zur Publikation
Allianzlizenz
Corresponding Authors der Uni Konstanz vorhanden
Internationale Co-Autor:innen
Universitätsbibliographie
Ja
Begutachtet
Diese Publikation teilen