Defect analysis of APCVD gettered multicrystalline silicon
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The effects of atmospheric pressure chemical vapor deposition (APCVD) gettering on material quality of industry standard mc-Si wafers has been studied on a microscopic level and compared to POCl3 gettered samples. The interaction of the gettering efficacy with the microscopic defect structure has been studied by a combination of measurements of the effective minority charge carrier lifetime (eff), interstitial iron (Fei), optical microscope images of defect structures revealed with Secco etching, a subsequent high resolution etch pit density (EPD) analysis as well as Electron Beam Induced Current (EBIC) and Electron Backscatter Diffraction (EBSD). Findings include a similar gettering quality of APCVD- and POCl3-based glasses and a reduction of EPD after the gettering step.
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FLECK, Martin, Jeanette LINDROOS, Annika ZUSCHLAG, Giso HAHN, 2018. Defect analysis of APCVD gettered multicrystalline silicon. 35th European Photovoltaic Solar Energy Conference and Exhibition. Brussels, 24. Sep. 2018 - 28. Okt. 2018. In: VERLINDEN, Pierre, ed. and others. 35th European Photovoltaic Solar Energy Conference and Exhibition. München: WIP, 2018, pp. 527-530. ISBN 978-3-936338-50-8BibTex
@inproceedings{Fleck2018Defec-45202, year={2018}, title={Defect analysis of APCVD gettered multicrystalline silicon}, url={https://www.eupvsec-planner.com/presentations/c45930/defect_analysis_of_apcvd_gettered_multicrystalline_silicon.htm}, isbn={978-3-936338-50-8}, publisher={WIP}, address={München}, booktitle={35th European Photovoltaic Solar Energy Conference and Exhibition}, pages={527--530}, editor={Verlinden, Pierre}, author={Fleck, Martin and Lindroos, Jeanette and Zuschlag, Annika and Hahn, Giso} }
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