@inproceedings{Fleck2018Defec-45202,
  year={2018},
  title={Defect analysis of APCVD gettered multicrystalline silicon},
  url={https://www.eupvsec-planner.com/presentations/c45930/defect_analysis_of_apcvd_gettered_multicrystalline_silicon.htm},
  isbn={978-3-936338-50-8},
  publisher={WIP},
  address={München},
  booktitle={35th European Photovoltaic Solar Energy Conference and Exhibition},
  pages={527--530},
  editor={Verlinden, Pierre},
  author={Fleck, Martin and Lindroos, Jeanette and Zuschlag, Annika and Hahn, Giso}
}

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    <dc:creator>Zuschlag, Annika</dc:creator>
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    <dcterms:title>Defect analysis of APCVD gettered multicrystalline silicon</dcterms:title>
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    <dc:contributor>Lindroos, Jeanette</dc:contributor>
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    <dc:creator>Fleck, Martin</dc:creator>
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    <dcterms:issued>2018</dcterms:issued>
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    <dc:creator>Lindroos, Jeanette</dc:creator>
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    <dc:contributor>Fleck, Martin</dc:contributor>
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    <dcterms:abstract xml:lang="eng">The effects of atmospheric pressure chemical vapor deposition (APCVD) gettering on material quality of industry standard mc-Si wafers has been studied on a microscopic level and compared to POCl3 gettered samples. The interaction of the gettering efficacy with the microscopic defect structure has been studied by a combination of measurements of the effective minority charge carrier lifetime (eff), interstitial iron (Fei), optical microscope images of defect structures revealed with Secco etching, a subsequent high resolution etch pit density (EPD) analysis as well as Electron Beam Induced Current (EBIC) and Electron Backscatter Diffraction (EBSD). Findings include a similar gettering quality of APCVD- and POCl3-based glasses and a reduction of EPD after the gettering step.</dcterms:abstract>
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    <dc:contributor>Zuschlag, Annika</dc:contributor>
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