@article{Tissot2022-04-20T08:23:26ZNucle-58282,
  year={2022},
  doi={10.1103/PhysRevResearch.4.033107},
  title={Nuclear Spin Quantum Memory in Silicon Carbide},
  number={3},
  volume={4},
  journal={Physical Review Research},
  author={Tissot, Benedikt and Trupke, Michael and Koller, Philipp and Astner, Thomas and Burkard, Guido},
  note={Article Number: 033107}
}

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    <dc:contributor>Astner, Thomas</dc:contributor>
    <dcterms:issued>2022-04-20T08:23:26Z</dcterms:issued>
    <dcterms:title>Nuclear Spin Quantum Memory in Silicon Carbide</dcterms:title>
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    <dc:contributor>Burkard, Guido</dc:contributor>
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    <dc:creator>Burkard, Guido</dc:creator>
    <dc:rights>Attribution 4.0 International</dc:rights>
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    <dcterms:abstract xml:lang="eng">Transition metal (TM) defects in silicon carbide (SiC) are a promising platform for applications in quantum technology. Some TM defects, e.g. vanadium, emit in one of the telecom bands, but the large ground state hyperfine manifold poses a problem for applications which require pure quantum states. We develop a driven, dissipative protocol to polarize the nuclear spin, based on a rigorous theoretical model of the defect. We further show that nuclear-spin polarization enables the use of well-known methods for initialization and long-time coherent storage of quantum states. The proposed nuclear-spin preparation protocol thus marks the first step towards an all-optically controlled integrated platform for quantum technology with TM defects in SiC.</dcterms:abstract>
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    <dc:contributor>Trupke, Michael</dc:contributor>
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    <dc:creator>Astner, Thomas</dc:creator>
    <dc:contributor>Tissot, Benedikt</dc:contributor>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2022-08-12T09:33:01Z</dc:date>
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    <dc:creator>Koller, Philipp</dc:creator>
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