@inproceedings{Gallacher2018Compo-45512,
  year={2018},
  doi={10.1109/PHOSST.2018.8456761},
  title={Components for Integrated Ge on Si for Mid-Infrared Photonic Sensors},
  isbn={978-1-5386-5343-2},
  publisher={IEEE},
  address={Piscataway, NJ},
  booktitle={2018 IEEE Photonics Society Summer Topical Meeting Series (SUM)},
  pages={177--178},
  editor={Fontaine, Nicolas},
  author={Gallacher, Kevin and Millar, Ross W. and Griskeviciute, Ugne and Fischer, Marco P. and Riede, Aaron and Frigerio, Jacopo and Baldassarre, Leonetta and Pellegrini, Giovanni and Leitenstorfer, Alfred and Brida, Daniele}
}

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    <dcterms:abstract xml:lang="eng">Components for mid-infrared chip-scale sensors are reviewed including loss measurements of Ge-on-Si waveguides between 8 and 10.5 μm wavelength. Third-harmonic generation is demonstrated using Ge nano-antennas. Such components are essential for a Ge-on-Si mid-infrared platform technology for healthcare, security and environmental sensing applications.</dcterms:abstract>
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