Hydrogen passivation of ribbon silicon-electronic properties and solar cell results

Hahn, Giso; Geiger, Patric; Fath, Peter; Bucher, Ernst

Hydrogen passivation of ribbon silicon-electronic properties and solar cell results

Dateien

Hahn_2-1jd05kdo45mm90.pdfGröße: 867.52 KBDownloads: 280

Datum

2000

Autor:innen

Hahn, Giso

Geiger, Patric

Fath, Peter

Bucher, Ernst

Open Access-Veröffentlichung

Open Access Green

Sammlungen

Physik

Publikationstyp

Beitrag zu einem Konferenzband

Publikationsstatus

Published

Erschienen in

IEEE, , ed.. Conference record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 : Anchorage Hilton Hotel, Anchorage, AK, 15 -22 September 2000. Piscataway, NJ: IEEE Operations Center, 2000, pp. 95-98. ISSN 0160-8371. ISBN 0-7803-5772-8. Available under: doi: 10.1109/PVSC.2000.915762

Zusammenfassung

Hydrogen bulk passivation of crystal defects plays a major role during solar cell processing of multicrystalline ribbon silicon material. In this study, the authors concentrate on the diffusion and effusion kinetics of hydrogen in different ribbon silicon materials (RGS (Bayer AG), EFG (ASE), String Ribbon (Evergreen Solar)). Electronic properties like majority charge carrier mobility and concentration were investigated by temperature dependent Hall measurements. Deuterium profiles determined with the SIMS method reveal that the diffusion velocity is strongly linked with the interstitial oxygen concentration present in the different materials. Taking into account these results, a confirmed record high efficiency of 12.5% on Bayer RGS silicon (4 cm²) was achieved with an optimized hydrogen passivation step.

Fachgebiet (DDC)

530 Physik

Konferenz

28th IEEE Photovoltaic Specialists Conference (PVSC), 15. Sep. 2000 - 22. Sep. 2000, Anchorage

Zitieren

ISO 690

HAHN, Giso, Patric GEIGER, Peter FATH, Ernst BUCHER, 2000. Hydrogen passivation of ribbon silicon-electronic properties and solar cell results. 28th IEEE Photovoltaic Specialists Conference (PVSC). Anchorage, 15. Sep. 2000 - 22. Sep. 2000. In: IEEE, , ed.. Conference record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 : Anchorage Hilton Hotel, Anchorage, AK, 15 -22 September 2000. Piscataway, NJ: IEEE Operations Center, 2000, pp. 95-98. ISSN 0160-8371. ISBN 0-7803-5772-8. Available under: doi: 10.1109/PVSC.2000.915762

BibTex

@inproceedings{Hahn2000Hydro-30890,
  year={2000},
  doi={10.1109/PVSC.2000.915762},
  title={Hydrogen passivation of ribbon silicon-electronic properties and solar cell results},
  isbn={0-7803-5772-8},
  issn={0160-8371},
  publisher={IEEE Operations Center},
  address={Piscataway, NJ},
  booktitle={Conference record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 : Anchorage Hilton Hotel, Anchorage, AK, 15 -22 September 2000},
  pages={95--98},
  editor={IEEE},
  author={Hahn, Giso and Geiger, Patric and Fath, Peter and Bucher, Ernst}
}

RDF

<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/30890">
    <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2015-05-06T07:55:00Z</dcterms:available>
    <dc:creator>Bucher, Ernst</dc:creator>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/30890/1/Hahn_2-1jd05kdo45mm90.pdf"/>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/30890"/>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2015-05-06T07:55:00Z</dc:date>
    <dc:contributor>Fath, Peter</dc:contributor>
    <dc:creator>Fath, Peter</dc:creator>
    <dc:rights>terms-of-use</dc:rights>
    <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/30890/1/Hahn_2-1jd05kdo45mm90.pdf"/>
    <dc:contributor>Bucher, Ernst</dc:contributor>
    <dc:creator>Geiger, Patric</dc:creator>
    <dc:language>eng</dc:language>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dc:creator>Hahn, Giso</dc:creator>
    <dcterms:abstract xml:lang="eng">Hydrogen bulk passivation of crystal defects plays a major role during solar cell processing of multicrystalline ribbon silicon material. In this study, the authors concentrate on the diffusion and effusion kinetics of hydrogen in different ribbon silicon materials (RGS (Bayer AG), EFG (ASE), String Ribbon (Evergreen Solar)). Electronic properties like majority charge carrier mobility and concentration were investigated by temperature dependent Hall measurements. Deuterium profiles determined with the SIMS method reveal that the diffusion velocity is strongly linked with the interstitial oxygen concentration present in the different materials. Taking into account these results, a confirmed record high efficiency of 12.5% on Bayer RGS silicon (4 cm&lt;sup&gt;2&lt;/sup&gt;) was achieved with an optimized hydrogen passivation step.</dcterms:abstract>
    <dcterms:title>Hydrogen passivation of ribbon silicon-electronic properties and solar cell results</dcterms:title>
    <dc:contributor>Geiger, Patric</dc:contributor>
    <dc:contributor>Hahn, Giso</dc:contributor>
    <dcterms:issued>2000</dcterms:issued>
  </rdf:Description>
</rdf:RDF>

Universitätsbibliographie

Nein