Spatially resolved lifetimes in EFG and String Ribbon silicon after gettering and hydrogenation steps

Geiger, Patric; Kragler, G.; Hahn, Giso; Fath, Peter; Bucher, Ernst

Spatially resolved lifetimes in EFG and String Ribbon silicon after gettering and hydrogenation steps

Dateien

Geiger_2-1qjxrnmzqps2s8.pdfGröße: 310.31 KBDownloads: 229

Datum

2002

Autor:innen

Geiger, Patric

Kragler, G.

Hahn, Giso

Fath, Peter

Bucher, Ernst

Open Access-Veröffentlichung

Open Access Green

Sammlungen

Physik

Publikationstyp

Beitrag zu einem Konferenzband

Publikationsstatus

Published

Erschienen in

Conference record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference - 2002 : Hyatt Regency New Orleans, New Orleans, Louisiana, May 19 - 24, 2002. Piscataway, NJ: IEEE, 2002, pp. 186-189. ISBN 0-7803-7471-1. Available under: doi: 10.1109/PVSC.2002.1190487

Zusammenfassung

Lifetime improvement in EFG and string ribbon silicon by gettering or defect passivation has been investigated by photoconductance decay. But in contrast to former studies measurements have been carried out in a spatially resolved way. In this way the mapping techniques have been found to be indespensable for an accurate study of processing steps' impact on material quality. This is due to very strong lifetime variations that have been measured throughout the wafer (between <1μs and >300μs), and because areas of the same starting quality have turned out to react very differently on applied processing steps. Consequently the results of integral measurements strongly depend on the nature of the areas incorporated in the specific sample. A statistical evaluation of the mapped lifetimes gives an impression of the uncertainties inherent to integral measurements.

Fachgebiet (DDC)

530 Physik

Konferenz

29th IEEE Photovoltaic Specialists Conference (PVSC), 19. Mai 2002 - 24. Mai 2002, New Orleans

Zitieren

ISO 690

GEIGER, Patric, G. KRAGLER, Giso HAHN, Peter FATH, Ernst BUCHER, 2002. Spatially resolved lifetimes in EFG and String Ribbon silicon after gettering and hydrogenation steps. 29th IEEE Photovoltaic Specialists Conference (PVSC). New Orleans, 19. Mai 2002 - 24. Mai 2002. In: Conference record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference - 2002 : Hyatt Regency New Orleans, New Orleans, Louisiana, May 19 - 24, 2002. Piscataway, NJ: IEEE, 2002, pp. 186-189. ISBN 0-7803-7471-1. Available under: doi: 10.1109/PVSC.2002.1190487

BibTex

@inproceedings{Geiger2002Spati-30948,
  year={2002},
  doi={10.1109/PVSC.2002.1190487},
  title={Spatially resolved lifetimes in EFG and String Ribbon silicon after gettering and hydrogenation steps},
  isbn={0-7803-7471-1},
  publisher={IEEE},
  address={Piscataway, NJ},
  booktitle={Conference record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference - 2002 : Hyatt Regency New Orleans, New Orleans, Louisiana, May 19 - 24, 2002},
  pages={186--189},
  author={Geiger, Patric and Kragler, G. and Hahn, Giso and Fath, Peter and Bucher, Ernst}
}

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