Investigation on the dependence of degradation rate on hole concentration during boron-oxygen related light-induced degradation in crystalline silicon

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AIP Advances. 2018, 8(8), 085219. eISSN 2158-3226. Available under: doi: 10.1063/1.5047084
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Boron-oxygen related light-induced degradation (BO-LID) of effective charge carrier lifetime is one of the major problems for photovoltaics based on oxygen-rich boron-doped wafer substrates. Within this contribution, the dependence of slow BO-related degradation rate on total hole concentration at 30°C is investigated. A widened high power 805 nm IR-laser is used to reach injection levels comparable with the doping level of the used 2 Ωcm material thus significantly impacting total hole concentration. It is found that slow BO-related degradation rate scales almost quadratically with total hole concentration in best agreement with results from other groups suggesting the involvement of two holes in the slow BO-related degradation mechanism.

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ISO 690GRAF, Alexander, Axel HERGUTH, Giso HAHN, 2018. Investigation on the dependence of degradation rate on hole concentration during boron-oxygen related light-induced degradation in crystalline silicon. In: AIP Advances. 2018, 8(8), 085219. eISSN 2158-3226. Available under: doi: 10.1063/1.5047084
BibTex
@article{Graf2018-08Inves-43358,
  year={2018},
  doi={10.1063/1.5047084},
  title={Investigation on the dependence of degradation rate on hole concentration during boron-oxygen related light-induced degradation in crystalline silicon},
  number={8},
  volume={8},
  journal={AIP Advances},
  author={Graf, Alexander and Herguth, Axel and Hahn, Giso},
  note={Article Number: 085219}
}
RDF
<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/43358">
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/43358/1/Graf_2-1s0pdjkx0q21d2.pdf"/>
    <dc:language>eng</dc:language>
    <dc:contributor>Graf, Alexander</dc:contributor>
    <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/43358/1/Graf_2-1s0pdjkx0q21d2.pdf"/>
    <dc:creator>Graf, Alexander</dc:creator>
    <dcterms:rights rdf:resource="http://creativecommons.org/licenses/by/4.0/"/>
    <dc:rights>Attribution 4.0 International</dc:rights>
    <dc:contributor>Herguth, Axel</dc:contributor>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dc:creator>Hahn, Giso</dc:creator>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dcterms:title>Investigation on the dependence of degradation rate on hole concentration during boron-oxygen related light-induced degradation in crystalline silicon</dcterms:title>
    <dc:contributor>Hahn, Giso</dc:contributor>
    <dcterms:abstract xml:lang="eng">Boron-oxygen related light-induced degradation (BO-LID) of effective charge carrier lifetime is one of the major problems for photovoltaics based on oxygen-rich boron-doped wafer substrates. Within this contribution, the dependence of slow BO-related degradation rate on total hole concentration at 30°C is investigated. A widened high power 805 nm IR-laser is used to reach injection levels comparable with the doping level of the used 2 Ωcm material thus significantly impacting total hole concentration. It is found that slow BO-related degradation rate scales almost quadratically with total hole concentration in best agreement with results from other groups suggesting the involvement of two holes in the slow BO-related degradation mechanism.</dcterms:abstract>
    <dc:creator>Herguth, Axel</dc:creator>
    <dcterms:issued>2018-08</dcterms:issued>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/43358"/>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2018-09-21T09:50:46Z</dcterms:available>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2018-09-21T09:50:46Z</dc:date>
  </rdf:Description>
</rdf:RDF>
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xmlui.Submission.submit.DescribeStep.inputForms.label.kops_note_fromSubmitter
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