@inproceedings{Fritz2017Tempe-41739,
  year={2017},
  doi={10.1016/j.egypro.2017.09.085},
  title={Temperature dependent degradation and regeneration of differently doped mc-Si materials},
  number={124},
  publisher={Elsevier},
  address={Amsterdam},
  series={Energy Procedia},
  booktitle={7th International Conference on Silicon Photovoltaics, SiliconPV 2017, 3-5 April 2017, Freiburg, Germany},
  pages={718--725},
  editor={Preu, Ralf},
  author={Fritz, Jakob and Zuschlag, Annika and Skorka, Daniel and Schmid, Andreas and Hahn, Giso}
}

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    <dc:contributor>Schmid, Andreas</dc:contributor>
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    <dc:creator>Fritz, Jakob</dc:creator>
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    <dcterms:title>Temperature dependent degradation and regeneration of differently doped mc-Si materials</dcterms:title>
    <dc:creator>Zuschlag, Annika</dc:creator>
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    <dc:contributor>Zuschlag, Annika</dc:contributor>
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    <dcterms:abstract xml:lang="eng">Light and elevated temperature induced degradation is observed for multicrystalline Si PERC-type solar cells, strongly limiting solar cell parameters under operation conditions. In this contribution, we investigate the effect of temperature on the degradation and regeneration kinetics of lifetime samples with different p-doping. While there is no fundamental difference visible between B- and Ga-doped materials, Ga-doped samples generally had a lower starting lifetimes and showed a slower degradation process. Ungettered Ga-doped samples did not regenerate within the applied time frame. For higher treatment temperatures (≥200°C) lifetimes after regeneration exceeded the initial values before degradation for both gettered materials. There are first indications that the degradation reaction is diffusion limited (following Arrhenius-like kinetics), while the observed regeneration kinetics might change for higher temperatures (≥150°C).</dcterms:abstract>
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    <dc:creator>Hahn, Giso</dc:creator>
    <dc:creator>Schmid, Andreas</dc:creator>
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