Concentration and penetration depth of H introduced into crystalline Si by hydrogenation methods used to fabricate solar cells

Kleekajai, Suppawan; Jiang, Fan; Stavola, Michael; Yelundur, Vijay; Nakayashiki, Kenta; Rohatgi, Ajeet; Hahn, Giso; Seren, Sven; Kalejs, Juris

Concentration and penetration depth of H introduced into crystalline Si by hydrogenation methods used to fabricate solar cells

Dateien

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Datum

2006

Autor:innen

Kleekajai, Suppawan

Jiang, Fan

Stavola, Michael

Yelundur, Vijay

Nakayashiki, Kenta

Rohatgi, Ajeet

Hahn, Giso

Seren, Sven

Kalejs, Juris

Open Access-Veröffentlichung

Open Access Green

Sammlungen

Physik

Publikationstyp

Zeitschriftenartikel

Publikationsstatus

Published

Erschienen in

Journal of Applied Physics. 2006, 100(9), 093517. ISSN 0021-8979. eISSN 1089-7550. Available under: doi: 10.1063/1.2363684

Zusammenfassung

The hydrogenation of crystalline Si by methods used to passivate defects in Si solar cells has been studied by infrared spectroscopy. For these experiments, floating-zone Si that contained Pt impurities that act as traps for H was used as a model system in which H could be directly detected. In this model system, the concentration and indiffusion depth of H were determined for different hydrogenation treatments so that their effectiveness could be compared. The postdeposition annealing of a hydrogen-rich SiN_x surface layer was found to introduce H into the Si bulk with a concentration of ∼10¹⁵cm⁻³ under the best conditions investigated here.

Fachgebiet (DDC)

530 Physik

Zitieren

ISO 690

KLEEKAJAI, Suppawan, Fan JIANG, Michael STAVOLA, Vijay YELUNDUR, Kenta NAKAYASHIKI, Ajeet ROHATGI, Giso HAHN, Sven SEREN, Juris KALEJS, 2006. Concentration and penetration depth of H introduced into crystalline Si by hydrogenation methods used to fabricate solar cells. In: Journal of Applied Physics. 2006, 100(9), 093517. ISSN 0021-8979. eISSN 1089-7550. Available under: doi: 10.1063/1.2363684

BibTex

@article{Kleekajai2006Conce-42192,
  year={2006},
  doi={10.1063/1.2363684},
  title={Concentration and penetration depth of H introduced into crystalline Si by hydrogenation methods used to fabricate solar cells},
  number={9},
  volume={100},
  issn={0021-8979},
  journal={Journal of Applied Physics},
  author={Kleekajai, Suppawan and Jiang, Fan and Stavola, Michael and Yelundur, Vijay and Nakayashiki, Kenta and Rohatgi, Ajeet and Hahn, Giso and Seren, Sven and Kalejs, Juris},
  note={Article Number: 093517}
}

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