@article{Vyvenko2005Impac-32974,
  year={2005},
  doi={10.4028/www.scientific.net/SSP.108-109.279},
  title={Impact of hydrogenation on electrical properties of NiSi<sub>2</sub> precipitates in silicon},
  volume={108-109},
  issn={1012-0394},
  journal={Solid State Phenomena},
  pages={279--284},
  author={Vyvenko, Oleg F. and Bazlov, N.V. and Trushin, A.A. and Nadolinski, A.A. and Seibt, M. and Schröter, M. and Hahn, Giso}
}

<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/32974">
    <dc:creator>Bazlov, N.V.</dc:creator>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2016-02-15T14:11:21Z</dc:date>
    <dcterms:issued>2005</dcterms:issued>
    <dcterms:title>Impact of hydrogenation on electrical properties of NiSi&lt;sub&gt;2&lt;/sub&gt; precipitates in silicon</dcterms:title>
    <dc:creator>Schröter, M.</dc:creator>
    <dc:creator>Nadolinski, A.A.</dc:creator>
    <dc:contributor>Bazlov, N.V.</dc:contributor>
    <dc:contributor>Seibt, M.</dc:contributor>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2016-02-15T14:11:21Z</dcterms:available>
    <dc:creator>Vyvenko, Oleg F.</dc:creator>
    <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/32974/1/Vyvenko_2-29e318zpvfet4.pdf"/>
    <dc:contributor>Trushin, A.A.</dc:contributor>
    <dcterms:abstract xml:lang="eng">Influence of annealing in molecular hydrogen as well as of treatment in hydrogen plasma (hydrogenation) on the electrical properties of NiSi&lt;sub&gt;2&lt;/sub&gt; precipitates in n- and p-type silicon has been studied by means of deep level transient spectroscopy (DLTS). Both annealing and hydrogenation gave rise to noticeable changes of the shape of the DLTS-peak and of the character of its dependence on the refilling pulse duration that according to [1] allows one to classify the electronic states of extended defects as “band-like” or “localized”. In both n- and p-type samples DLTS-peak in the initial as quenched samples showed bandlike behaviour. Annealing or hydrogenation of n-type samples converted the band-like states to the localised ones but differently shifted the DLTS-peak to higher temperatures. In p-type samples, the initial “band-like” behaviour of DLTS peak remained qualitatively unchanged after annealing or hydrogenation. A decrease of the DLTS-peak due to precipitates and the appearance of the peaks due to substitutional nickel and its complexes were found in hydrogenated p-type sample after removal of a surface layer of 10-20µm.</dcterms:abstract>
    <dc:contributor>Vyvenko, Oleg F.</dc:contributor>
    <dc:contributor>Hahn, Giso</dc:contributor>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dc:creator>Trushin, A.A.</dc:creator>
    <dc:language>eng</dc:language>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/32974/1/Vyvenko_2-29e318zpvfet4.pdf"/>
    <dc:creator>Seibt, M.</dc:creator>
    <dc:rights>terms-of-use</dc:rights>
    <dc:contributor>Nadolinski, A.A.</dc:contributor>
    <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/>
    <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/32974"/>
    <dc:contributor>Schröter, M.</dc:contributor>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:creator>Hahn, Giso</dc:creator>
  </rdf:Description>
</rdf:RDF>