Investigating possible causes of light induced degradation in boron-doped Float-Zone silicon

Sperber, David; Herguth, Axel; Hahn, Giso

Investigating possible causes of light induced degradation in boron-doped Float-Zone silicon

Dateien

Sperber_2-8fikcaaxzsji9.pdfGröße: 3.2 MBDownloads: 222

Datum

2017

Open Access-Veröffentlichung

Open Access Green

Sammlungen

Physik

Publikationstyp

Beitrag zu einem Konferenzband

Publikationsstatus

Published

Erschienen in

SMETS, Arno, ed. and others. 33rd European Photovoltaic Solar Energy Conference and Exhibition : proceedings of the international conference. München: WIP, 2017, pp. 565-568. ISSN 2196-0992. ISBN 3-936338-47-7. Available under: doi: 10.4229/EUPVSEC20172017-2AV.1.39

Zusammenfassung

The use of different silicon nitride deposition tools is found to change the degree of light induced degradation (LID) of B-doped float-zone silicon after a fast firing step. In addition, a thermally grown SiO2 interlayer further suppresses LID after firing. Possible mechanisms and a potential link to Light and elevated Temperature Induced Degradation (LeTID) are discussed. Furthermore, it is shown that LID is not related to an earlier described class of thermally activated defects in float-zone silicon and that phosphorous gettering does not influence the occurrence of LID in B-doped float-zone silicon significantly.

Fachgebiet (DDC)

530 Physik

Schlagwörter

Light induced degradation, LeTID, Stability, Degradation, Silicon nitride, Minority carrier lifetime

Konferenz

33rd European Photovoltaic Solar Energy Conference and Exhibition : EU PVSEC 2017, 25. Sep. 2017 - 29. Sep. 2017, Amsterdam

Zitieren

ISO 690

SPERBER, David, Axel HERGUTH, Giso HAHN, 2017. Investigating possible causes of light induced degradation in boron-doped Float-Zone silicon. 33rd European Photovoltaic Solar Energy Conference and Exhibition : EU PVSEC 2017. Amsterdam, 25. Sep. 2017 - 29. Sep. 2017. In: SMETS, Arno, ed. and others. 33rd European Photovoltaic Solar Energy Conference and Exhibition : proceedings of the international conference. München: WIP, 2017, pp. 565-568. ISSN 2196-0992. ISBN 3-936338-47-7. Available under: doi: 10.4229/EUPVSEC20172017-2AV.1.39

BibTex

@inproceedings{Sperber2017Inves-42289,
  year={2017},
  doi={10.4229/EUPVSEC20172017-2AV.1.39},
  title={Investigating possible causes of light induced degradation in boron-doped Float-Zone silicon},
  isbn={3-936338-47-7},
  issn={2196-0992},
  publisher={WIP},
  address={München},
  booktitle={33rd European Photovoltaic Solar Energy Conference and Exhibition : proceedings of the international conference},
  pages={565--568},
  editor={Smets, Arno},
  author={Sperber, David and Herguth, Axel and Hahn, Giso}
}

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