@inproceedings{Geml2020Proce-51686,
  year={2020},
  title={Process influences during atmospheric pressure chemical vapor deposition of passivating Si-based doping glasses for PERT solar concepts},
  url={https://www.eupvsec-proceedings.com/proceedings?fulltext=hahn&paper=49633},
  isbn={3-936338-73-6},
  publisher={WIP},
  address={München},
  booktitle={37th European Photovoltaic Solar Energy Conference and Exhibition (EUPVSEC) : Proceedings},
  pages={214--217},
  author={Geml, Fabian and Engelhardt, Josh and Gapp, Benjamin and Reinalter, Luis-Frieder and Hahn, Giso}
}

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    <dc:contributor>Engelhardt, Josh</dc:contributor>
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    <dc:contributor>Geml, Fabian</dc:contributor>
    <dcterms:title>Process influences during atmospheric pressure chemical vapor deposition of passivating Si-based doping glasses for PERT solar concepts</dcterms:title>
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    <dcterms:abstract xml:lang="eng">PERT (Passivated Emitter, Rear Totally diffused) solar cells based on n-type crystalline Si are influencing the commercial solar cell market. Due to a highly competitive market, a low-cost production is favorable. Atmospheric pressure chemical vapor deposition tools provide a feasible process with high throughput, low production as well as low upkeep costs. Furthermore, the deposition of single-sided doped glass layers enables the possibility of a cost-efficient co-diffusion step. Based on diborane, phosphine and oxygen as precursor gases, borosilicate glass (BSG) and phosphorus silicate glass (PSG) layers are deposited, reaching high surface passivation quality after diffusion. In this contribution, we show the influences of an atmospheric treatment in combination with a capping layer on BSG and PSG, respectively. Emitters diffused from such glasses can be used to produce high-efficiency low-cost PERT solar cells.</dcterms:abstract>
    <dc:creator>Engelhardt, Josh</dc:creator>
    <dc:contributor>Reinalter, Luis-Frieder</dc:contributor>
    <dc:creator>Hahn, Giso</dc:creator>
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    <dc:creator>Reinalter, Luis-Frieder</dc:creator>
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    <dc:contributor>Gapp, Benjamin</dc:contributor>
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