Design considerations for industrial rear passivated solar cells

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2012
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2012 38th IEEE Photovoltaic Specialists Conference. IEEE, 2012, pp. 001710-001715. ISBN 978-1-4673-0064-3. Available under: doi: 10.1109/PVSC.2012.6317925
Zusammenfassung

In this work, the solar cell development issues arising by adding a dielectric rear side passivation to a standard screen-printing process are discussed with deposited Al2O3 on p-type Cz-Si as an example. The influence of several design parameters is assessed in simulation and experiment and an optimization strategy is presented. These parameters include optical properties of the cell, like the choice of dielectric layer thickness and wafer surface roughness, parameters that influence the passivation quality like the temperature of the co-firing step in a belt furnace as well as electrical parameters like contact geometry, contact spacing and base resistivity. Their influence on the three efficiency-determining quantities, VOC, JSC and FF is outlined. Special attention is paid to minimizing the inevitable loss in FF in a PERC design.

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530 Physik
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2012 IEEE 38th Photovoltaic Specialists Conference (PVSC), 3. Juni 2012 - 8. Juni 2012, Austin, TX, USA
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Zitieren
ISO 690LAUERMANN, Thomas, Benjamin FRÖHLICH, Giso HAHN, Barbara TERHEIDEN, 2012. Design considerations for industrial rear passivated solar cells. 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC). Austin, TX, USA, 3. Juni 2012 - 8. Juni 2012. In: 2012 38th IEEE Photovoltaic Specialists Conference. IEEE, 2012, pp. 001710-001715. ISBN 978-1-4673-0064-3. Available under: doi: 10.1109/PVSC.2012.6317925
BibTex
@inproceedings{Lauermann2012-06Desig-22493,
  year={2012},
  doi={10.1109/PVSC.2012.6317925},
  title={Design considerations for industrial rear passivated solar cells},
  isbn={978-1-4673-0064-3},
  publisher={IEEE},
  booktitle={2012 38th IEEE Photovoltaic Specialists Conference},
  pages={001710--001715},
  author={Lauermann, Thomas and Fröhlich, Benjamin and Hahn, Giso and Terheiden, Barbara}
}
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    <dcterms:abstract xml:lang="eng">In this work, the solar cell development issues arising by adding a dielectric rear side passivation to a standard screen-printing process are discussed with deposited Al&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt; on p-type Cz-Si as an example. The influence of several design parameters is assessed in simulation and experiment and an optimization strategy is presented. These parameters include optical properties of the cell, like the choice of dielectric layer thickness and wafer surface roughness, parameters that influence the passivation quality like the temperature of the co-firing step in a belt furnace as well as electrical parameters like contact geometry, contact spacing and base resistivity. Their influence on the three efficiency-determining quantities, V&lt;sub&gt;OC&lt;/sub&gt;, J&lt;sub&gt;SC&lt;/sub&gt; and FF is outlined. Special attention is paid to minimizing the inevitable loss in FF in a PERC design.</dcterms:abstract>
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