@inproceedings{DastgheibShirazi2012-06Effec-22495,
  year={2012},
  doi={10.1109/PVSC.2012.6317897},
  title={Effects of process conditions for the n<sup>+</sup>-emitter formation in crystalline silicon},
  isbn={978-1-4673-0064-3},
  publisher={IEEE},
  booktitle={2012 38th IEEE Photovoltaic Specialists Conference},
  pages={001584--001589},
  author={Dastgheib-Shirazi, Amir and Steyer, Michael and Micard, Gabriel and Wagner, Hannes and Altermatt, Pietro and Hahn, Giso}
}

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    <dc:creator>Wagner, Hannes</dc:creator>
    <dc:creator>Micard, Gabriel</dc:creator>
    <dc:creator>Altermatt, Pietro</dc:creator>
    <dc:contributor>Micard, Gabriel</dc:contributor>
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    <dc:contributor>Wagner, Hannes</dc:contributor>
    <dc:language>eng</dc:language>
    <dcterms:issued>2012-06</dcterms:issued>
    <dc:creator>Dastgheib-Shirazi, Amir</dc:creator>
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    <dcterms:bibliographicCitation>38th IEEE Photovoltaic Specialists Conference (PVSC) 2012 : Austin, Texas, USA, 3 - 8 June 2012 / [IEEE Electron Devices Society]. - Piscataway, NJ : IEEE, 2012. - S. 1584-1589. - ISBN 978-1-467-30064-3</dcterms:bibliographicCitation>
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    <dcterms:abstract xml:lang="eng">Nowadays new solar cell concepts are continually attracting the attention of the PV industry. Thereby emitter structures and the application of high performance emitters like the homogeneous and etched-back emitter on crystalline p- and n-type silicon solar cells continue to be very popular [1]-[4]. In this work we study the influence of process parameters on the phosphosilicate glass layer characteristics during the predeposition of a POCl&lt;sub&gt;3&lt;/sub&gt; diffusion process. The quantitative analysis of the highly doped layer gives a deeper understanding of the phosphorus diffusion process for industrial emitter structures.</dcterms:abstract>
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    <dc:contributor>Steyer, Michael</dc:contributor>
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    <dc:contributor>Dastgheib-Shirazi, Amir</dc:contributor>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2013-03-28T12:56:37Z</dc:date>
    <dc:contributor>Hahn, Giso</dc:contributor>
    <dcterms:title>Effects of process conditions for the n&lt;sup&gt;+&lt;/sup&gt;-emitter formation in crystalline silicon</dcterms:title>
    <dc:contributor>Altermatt, Pietro</dc:contributor>
    <dc:creator>Steyer, Michael</dc:creator>
    <dc:creator>Hahn, Giso</dc:creator>
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