@inproceedings{Steyer2012study-22522,
  year={2012},
  doi={10.4229/27thEUPVSEC2012-2BV.5.1},
  title={A study of various methods for the analysis of the phophosilicate glass layer},
  isbn={3-936338-28-0},
  publisher={WIP Renewable Energies},
  address={München},
  booktitle={27th European Photovoltaic Solar Energy Conference and Exhibition},
  pages={1325--1328},
  author={Steyer, Michael and Dastgheib-Shirazi, Amir and Wagner, Hannes and Micard, Gabriel and Altermatt, Pietro and Hahn, Giso},
  note={DVD-Ausgabe}
}

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    <dc:contributor>Micard, Gabriel</dc:contributor>
    <dc:contributor>Dastgheib-Shirazi, Amir</dc:contributor>
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    <dc:language>eng</dc:language>
    <dc:creator>Wagner, Hannes</dc:creator>
    <dc:creator>Altermatt, Pietro</dc:creator>
    <dc:creator>Micard, Gabriel</dc:creator>
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    <dcterms:abstract xml:lang="eng">The understanding and therefore the optimization of n+-emitter formation in crystalline silicon using POCl3-diffusion requires a more detailed knowledge of the dopant source: the PhosphoSilicate Glass (PSG) layer. The growth of PSG during the phosphorus diffusion process depends on several process parameters, such as temperature, duration, POCl3-N2 and O2 gas flows. In this work, we compare the uncertainties in various methods for PSG thickness measurements: by an Atomic Force Microscope (AFM), a profilometer, a Scanning Electron Microscope (SEM) and a spectroscopic ellipsometer. We then quantify how the PSG thickness is influenced by the process parameters. We also measure the total amount of phosphorus (P-dose) in the PSG layer using Inductively Coupled Plasma Optical Emission Spectrometry (ICP-OES) and quantify the P dose in dependence of the process parameters as well. Finally, by combining both the measured PSG thickness and the dose, we successfully determine a lower limit for the phosphorus concentration in the PSG layer. It is, depending on the process parameters, between 7x1021 cm-3 and 1.2x1022 cm-3, which is a remarkably narrow range. These results will help to improve the phosphorus diffusion model by considering both the PSG growth behavior and PSG composition, and so will facilitate the development of a predictive model for the POCl3 diffusions process.</dcterms:abstract>
    <dc:contributor>Hahn, Giso</dc:contributor>
    <dc:contributor>Steyer, Michael</dc:contributor>
    <dc:contributor>Altermatt, Pietro</dc:contributor>
    <dcterms:issued>2012</dcterms:issued>
    <dc:creator>Dastgheib-Shirazi, Amir</dc:creator>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2013-03-28T15:31:35Z</dcterms:available>
    <dc:contributor>Wagner, Hannes</dc:contributor>
    <dcterms:bibliographicCitation>27th European Photovoltaic Solar Energy Conference and Exhibition : Messe Frankfurt and Congress Center Frankfurt, Germany ; conference 24 - 28 September 2012, exhibition 25 - 28 September 2012 ; proceedings / EU PVSEC 2012. - München : WIP-Renewable Energies, 2012. - S. 1325-1328. - ISBN 3-936338-28-0</dcterms:bibliographicCitation>
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