@inproceedings{XimelloQuiebras2009KOHet-934,
  year={2009},
  doi={10.4229/24thEUPVSEC2009-2CV.5.70},
  title={A new KOH-etch solution to produce a random pyramid texture on monocrystalline silicon at elevated process temperatures and shortened process times},
  isbn={3-936338-25-6},
  publisher={WIP},
  address={München},
  booktitle={Proceedings of the 24th European PV SEC, Hamburg, 21 - 25 September 2009},
  pages={1958--1960},
  author={Ximello Quiebras, Jose Nestor and Haverkamp, Helge and Hahn, Giso}
}

<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/934">
    <dcterms:title>A new KOH-etch solution to produce a random pyramid texture on monocrystalline silicon at elevated process temperatures and shortened process times</dcterms:title>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dcterms:bibliographicCitation>Publ. in: Proceedings of the 24th European PV SEC, Hamburg, 21-25 September 2009</dcterms:bibliographicCitation>
    <dc:contributor>Hahn, Giso</dc:contributor>
    <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/934"/>
    <dc:contributor>Ximello Quiebras, Jose Nestor</dc:contributor>
    <dc:creator>Hahn, Giso</dc:creator>
    <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/934/1/Ximello_opus-103961.pdf"/>
    <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/934/1/Ximello_opus-103961.pdf"/>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-22T17:52:20Z</dcterms:available>
    <dc:creator>Ximello Quiebras, Jose Nestor</dc:creator>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-22T17:52:20Z</dc:date>
    <dcterms:issued>2009</dcterms:issued>
    <dc:creator>Haverkamp, Helge</dc:creator>
    <dc:contributor>Haverkamp, Helge</dc:contributor>
    <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dcterms:abstract xml:lang="eng">Texturization of monocrystalline silicon for solar cells is still an issue due to the properties of the isopropyl alcohol (IPA) in the standard Potassium Hydroxide KOH (or Sodium Hydroxide NaOH)-IPA etching solution. The low boiling point of IPA (82.4oC) is limiting etch temperature and by this processing speed. Furthermore, IPA has other disadvantages like waste recycling problems. A better alternative for IPA, not only regarding processing time, is a High Boiling Alcohol (HBA). In this paper we show, that our newly found KOH-HBA texture also gives lower reflection results than our KOH-IPA texture. Finally, we produced solar cells with both textures and current-voltage measurements are compared.</dcterms:abstract>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:language>eng</dc:language>
    <dc:rights>terms-of-use</dc:rights>
  </rdf:Description>
</rdf:RDF>