Bulk hydrogenation in mc-Si by PECVD SiNx deposition only

Lade...
Vorschaubild
Dateien
Herzog_opus-121371.pdf
Herzog_opus-121371.pdfGröße: 717.3 KBDownloads: 148
Datum
2007
Herausgeber:innen
Kontakt
ISSN der Zeitschrift
Electronic ISSN
ISBN
Bibliografische Daten
Verlag
Schriftenreihe
Auflagebezeichnung
DOI (zitierfähiger Link)
ArXiv-ID
Internationale Patentnummer
Angaben zur Forschungsförderung
Projekt
Open Access-Veröffentlichung
Open Access Green
Sammlungen
Core Facility der Universität Konstanz
Gesperrt bis
Titel in einer weiteren Sprache
Forschungsvorhaben
Organisationseinheiten
Zeitschriftenheft
Publikationstyp
Beitrag zu einem Konferenzband
Publikationsstatus
Published
Erschienen in
The compiled state-of-the-art of PV solar technology and deployment : 22nd European Photovoltaic Solar Energy Conference, EU PVSEC ; proceedings of the international conference, held in Milan, Italy, 3 - 7 September 2007. München: WIP-Renewable Energies, 2007, pp. 1722-1725
Zusammenfassung

Recent publications have studied the bulk hydrogenation of mc-Si by PECVD SiNx deposition after a high temperature firing step. Our investigation focuses on the effect of bulk hydrogenation in mc-Si via PECVD SiNx deposition at low temperatures without a subsequent firing step. Tests were performed on p-type String Ribbon wafers, p-type EFG Ribbon wafers and n-type and p-type wafers from mc-Si ingots. Adjacent and neighbouring wafers respectively are used to compare bulk lifetimes after single and double sided SiNx deposition on wafers as grown and after P-gettering. Bulk lifetime was measured spatially resolved with μ-PCD. Surface passivation was done with an iodine-ethanol solution. The bulk hydrogenation effect is detectable for PECVD SiNx deposition only, without additional firing step, but varies for different mc-Si materials. The effect is stronger in H-sensitive materials, however, a general statement for all mc-Si materials is difficult.

Zusammenfassung in einer weiteren Sprache
Fachgebiet (DDC)
530 Physik
Schlagwörter
Bulk hydrogenation, PECVD-SiN, mc-Si
Konferenz
EU PVSEC, 3. Sep. 2007 - 7. Sep. 2007, Milan, Italy
Rezension
undefined / . - undefined, undefined
Zitieren
ISO 690HERZOG, Bernhard, Bernd RAABE, Giso HAHN, 2007. Bulk hydrogenation in mc-Si by PECVD SiNx deposition only. EU PVSEC. Milan, Italy, 3. Sep. 2007 - 7. Sep. 2007. In: The compiled state-of-the-art of PV solar technology and deployment : 22nd European Photovoltaic Solar Energy Conference, EU PVSEC ; proceedings of the international conference, held in Milan, Italy, 3 - 7 September 2007. München: WIP-Renewable Energies, 2007, pp. 1722-1725
BibTex
@inproceedings{Herzog2007hydro-872,
  year={2007},
  title={Bulk hydrogenation in mc-Si by PECVD SiN<sub>x</sub> deposition only},
  publisher={WIP-Renewable Energies},
  address={München},
  booktitle={The compiled state-of-the-art of PV solar technology and deployment : 22nd European Photovoltaic Solar Energy Conference, EU PVSEC ; proceedings of the international conference, held in Milan, Italy, 3 - 7 September 2007},
  pages={1722--1725},
  author={Herzog, Bernhard and Raabe, Bernd and Hahn, Giso}
}
RDF
<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/872">
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-22T17:51:38Z</dcterms:available>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dc:language>eng</dc:language>
    <dcterms:title>Bulk hydrogenation in mc-Si by PECVD SiN&lt;sub&gt;x&lt;/sub&gt; deposition only</dcterms:title>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:contributor>Hahn, Giso</dc:contributor>
    <dc:creator>Herzog, Bernhard</dc:creator>
    <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/872/1/Herzog_opus-121371.pdf"/>
    <dc:contributor>Raabe, Bernd</dc:contributor>
    <dcterms:bibliographicCitation>The compiled state-of-the-art of PV solar technology and deployment : 22nd European Photovoltaic Solar Energy Conference, EU PVSEC ; proceedings of the international conference, held in Milan, Italy, 3 - 7 September 2007. München: WIP-Renewable Energies, 2007, pp. 1722-1725</dcterms:bibliographicCitation>
    <dc:rights>terms-of-use</dc:rights>
    <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/872"/>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-22T17:51:38Z</dc:date>
    <dcterms:abstract xml:lang="eng">Recent publications have studied the bulk hydrogenation of mc-Si by PECVD SiNx deposition after a high temperature firing step. Our investigation focuses on the effect of bulk hydrogenation in mc-Si via PECVD SiNx deposition at low temperatures without a subsequent firing step. Tests were performed on p-type String Ribbon wafers, p-type EFG Ribbon wafers and n-type and p-type wafers from mc-Si ingots. Adjacent and neighbouring wafers respectively are used to compare bulk lifetimes after single and double sided SiNx deposition on wafers as grown and after P-gettering. Bulk lifetime was measured spatially resolved with μ-PCD. Surface passivation was done with an iodine-ethanol solution. The bulk hydrogenation effect is detectable for PECVD SiNx deposition only, without additional firing step, but varies for different mc-Si materials. The effect is stronger in H-sensitive materials, however, a general statement for all mc-Si materials is difficult.</dcterms:abstract>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dcterms:issued>2007</dcterms:issued>
    <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/>
    <dc:creator>Raabe, Bernd</dc:creator>
    <dc:creator>Hahn, Giso</dc:creator>
    <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/872/1/Herzog_opus-121371.pdf"/>
    <dc:contributor>Herzog, Bernhard</dc:contributor>
  </rdf:Description>
</rdf:RDF>
Interner Vermerk
xmlui.Submission.submit.DescribeStep.inputForms.label.kops_note_fromSubmitter
Kontakt
URL der Originalveröffentl.
Prüfdatum der URL
Prüfungsdatum der Dissertation
Finanzierungsart
Kommentar zur Publikation
Allianzlizenz
Corresponding Authors der Uni Konstanz vorhanden
Internationale Co-Autor:innen
Universitätsbibliographie
Ja
Begutachtet
Diese Publikation teilen