@inproceedings{Herzog2008hydro-985,
  year={2008},
  doi={10.4229/23rdEUPVSEC2008-2DV.1.8},
  title={Bulk hydrogenation in mc-Si by PECVD SiNx deposition using direct and remote plasma},
  publisher={WIP Renewable Energies},
  address={München},
  booktitle={The compiled state-of-the-art of PV solar technology and deployment : 23rd European Photovoltaic Solar Energy Conference},
  pages={1863--1866},
  editor={Lincot, D.},
  author={Herzog, Bernhard and Hahn, Giso and Hofmann, Marc and Romijn, Ingrid G. and Weeber, Arthur W.}
}

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    <dc:contributor>Hofmann, Marc</dc:contributor>
    <dcterms:abstract xml:lang="eng">Our investigation focuses on the effect of bulk hydrogenation in mc-Si via PECVD SiNx deposition at low temperatures, so without a subsequent firing step. In a recent publication we have shown that bulk lifetime improvement in mc-Si takes place during PECVD SiNx deposition at 450°C in a PECVD furnace with direct plasma and low plasma generator frequency. In this work we study the bulk hydrogenation of mc-Si during SiNx deposition in different PECVD systems with direct and remote plasma. Tests were performed on p-type and n-type wafers from mc-Si ingots, p-type String Ribbon wafers and p-type EFG ribbon wafers. Neighbouring and adjacent wafers respectively are used to compare bulk lifetimes after single and double sided SiNx deposition on wafers as grown and after P-gettering. Bulk lifetime was measured spatially resolved with μ-PCD. Surface passivation was provided with an iodine-ethanol solution. Significant bulk lifetime improvement in mc-Si takes place during SiNx deposition at low temperatures in PECVD systems with direct and remote plasma, without additional firing step. The effect varies for different mc-Si materials, however, a general statement for all mc-Si materials is difficult.</dcterms:abstract>
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    <dc:contributor>Hahn, Giso</dc:contributor>
    <dcterms:title>Bulk hydrogenation in mc-Si by PECVD SiNx deposition using direct and remote plasma</dcterms:title>
    <dc:contributor>Romijn, Ingrid G.</dc:contributor>
    <dc:contributor>Weeber, Arthur W.</dc:contributor>
    <dcterms:issued>2008</dcterms:issued>
    <dc:contributor>Herzog, Bernhard</dc:contributor>
    <dc:creator>Herzog, Bernhard</dc:creator>
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    <dc:creator>Hahn, Giso</dc:creator>
    <dc:creator>Romijn, Ingrid G.</dc:creator>
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    <dcterms:bibliographicCitation>The compiled state-of-the-art of PV solar technology and deployment : 23rd European Photovoltaic Solar Energy Conference, EU PVSEC, Valencia, Spain, 1 - 5 September 2008 ; proceedings / Ed. by: D. Lincot ... Munich : WIP-Renewable Energies, 2008, pp. 1863-1866</dcterms:bibliographicCitation>
    <dc:creator>Weeber, Arthur W.</dc:creator>
    <dc:language>fra</dc:language>
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    <dc:creator>Hofmann, Marc</dc:creator>
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