@inproceedings{Seren2008Shunt-909,
  year={2008},
  title={Shunt Detection With Illuminated Lock-In Thermography on Inline Relevant Time Scales},
  publisher={WIP-Renewable Energies},
  address={Munich},
  booktitle={The compiled state-of-the-art of PV solar technology and deployment  :  23rd European Photovoltaic Solar Energy Conference, EU PVSEC, Valencia, Spain, 1 - 5 September 2008  ;  proceedings},
  pages={1746--1748},
  editor={Lincot, D.},
  author={Seren, Sven and Kaes, Martin and Hahn, Giso and Nagel, H.}
}

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    <dcterms:title>Shunt Detection With Illuminated Lock-In Thermography on Inline Relevant Time Scales</dcterms:title>
    <dc:contributor>Hahn, Giso</dc:contributor>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-22T17:51:52Z</dc:date>
    <dc:creator>Seren, Sven</dc:creator>
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    <dc:creator>Nagel, H.</dc:creator>
    <dcterms:issued>2008</dcterms:issued>
    <dc:contributor>Nagel, H.</dc:contributor>
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    <dc:contributor>Kaes, Martin</dc:contributor>
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    <dcterms:bibliographicCitation>Publ. in: The compiled state-of-the-art of PV solar technology and deployment : 23rd European Photovoltaic Solar Energy Conference, EU PVSEC, Valencia, Spain, 1 - 5 September 2008 ; proceedings / Ed. by: D. Lincot ... Munich : WIP-Renewable Energies, 2008, pp. 1746-1748</dcterms:bibliographicCitation>
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    <dcterms:abstract xml:lang="eng">The focus of this paper is on the fast spatially resolved detection of conversion efficiency limiting shunts in solar cells. These shunt  producing defects can originate either from the wafer material itself or can be formed during solar cell processing. Such heat dissipating defects can be detected easily using the Lock-In Thermography technique. By improving the thermal resolution by means of lowering the Lock-In frequency the measurement time can be reduced significantly. Such fast illuminated Lock-In  Thermography (iLIT) measurements allow the detection of local shunts spatially resolved within a measurement time of only one second. For different shunting mechanisms such as material induced defects as well as processing induced shunts fast iLIT measurements are presented and demonstrate that the considered shunting types can be reliably detected within a time interval relevant for inline characterisation.</dcterms:abstract>
    <dc:contributor>Seren, Sven</dc:contributor>
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    <dc:creator>Hahn, Giso</dc:creator>
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    <dc:creator>Kaes, Martin</dc:creator>
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