Wetting behavior of liquid 4He on rough Cs films : pinning, memory effect, and micropuddles

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paper_347_PhysRevB_klier_PL_reinelt2005.pdf
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2005
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Klier, Jürgen
Reinelt, Dietmar
Wyatt, Adrian F. G.
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Physical Review B. 2005, 72, 245410. Available under: doi: 10.1103/PhysRevB.72.245410
Zusammenfassung

The liquid 4He-cesium system is a nearly ideal one for studying wetting phenomena. However, it can show nonideal behavior such as an extreme wetting hysteresis and a memory of being in contact with liquid 4He. We believe that this is caused by the roughness of the Cs surface. We review the wetting characteristics of Cs surfaces produced by various methods, and we qualitatively classify Cs surfaces according to the strength of pinning of the contact line. New data are presented on quench-condensed Cs surfaces that show that the pinning can be weak and the contact line can move freely to dewet this Cs. We discuss how micropuddles can form on strong-pinning surfaces, and we discuss how this leads to the memory effect and changes the effective pinning. These phenomena should be generally relevant to the wetting behavior of rough surfaces.

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ISO 690KLIER, Jürgen, Paul LEIDERER, Dietmar REINELT, Adrian F. G. WYATT, 2005. Wetting behavior of liquid 4He on rough Cs films : pinning, memory effect, and micropuddles. In: Physical Review B. 2005, 72, 245410. Available under: doi: 10.1103/PhysRevB.72.245410
BibTex
@article{Klier2005Wetti-9180,
  year={2005},
  doi={10.1103/PhysRevB.72.245410},
  title={Wetting behavior of liquid 4He on rough Cs films : pinning, memory effect, and micropuddles},
  volume={72},
  journal={Physical Review B},
  author={Klier, Jürgen and Leiderer, Paul and Reinelt, Dietmar and Wyatt, Adrian F. G.},
  note={Article Number: 245410}
}
RDF
<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/9180">
    <dcterms:title>Wetting behavior of liquid 4He on rough Cs films : pinning, memory effect, and micropuddles</dcterms:title>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dc:language>eng</dc:language>
    <dc:creator>Wyatt, Adrian F. G.</dc:creator>
    <dc:format>application/pdf</dc:format>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T17:54:18Z</dc:date>
    <dc:rights>Attribution-NonCommercial-NoDerivs 2.0 Generic</dc:rights>
    <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/9180/1/paper_347_PhysRevB_klier_PL_reinelt2005.pdf"/>
    <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/9180/1/paper_347_PhysRevB_klier_PL_reinelt2005.pdf"/>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T17:54:18Z</dcterms:available>
    <dc:contributor>Klier, Jürgen</dc:contributor>
    <dc:creator>Reinelt, Dietmar</dc:creator>
    <dc:contributor>Wyatt, Adrian F. G.</dc:contributor>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dcterms:abstract xml:lang="eng">The liquid 4He-cesium system is a nearly ideal one for studying wetting phenomena. However, it can show nonideal behavior such as an extreme wetting hysteresis and a memory of being in contact with liquid 4He. We believe that this is caused by the roughness of the Cs surface. We review the wetting characteristics of Cs surfaces produced by various methods, and we qualitatively classify Cs surfaces according to the strength of pinning of the contact line. New data are presented on quench-condensed Cs surfaces that show that the pinning can be weak and the contact line can move freely to dewet this Cs. We discuss how micropuddles can form on strong-pinning surfaces, and we discuss how this leads to the memory effect and changes the effective pinning. These phenomena should be generally relevant to the wetting behavior of rough surfaces.</dcterms:abstract>
    <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/9180"/>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:creator>Klier, Jürgen</dc:creator>
    <dcterms:bibliographicCitation>First publ. in: Physical Review B 72 (2005), Article 245410</dcterms:bibliographicCitation>
    <dcterms:rights rdf:resource="http://creativecommons.org/licenses/by-nc-nd/2.0/"/>
    <dc:contributor>Leiderer, Paul</dc:contributor>
    <dcterms:issued>2005</dcterms:issued>
    <dc:contributor>Reinelt, Dietmar</dc:contributor>
    <dc:creator>Leiderer, Paul</dc:creator>
  </rdf:Description>
</rdf:RDF>
Interner Vermerk
xmlui.Submission.submit.DescribeStep.inputForms.label.kops_note_fromSubmitter
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