@article{Ballif1998Submi-9515,
  year={1998},
  doi={10.1116/1.581266},
  title={Submicron contacts for electrical characterization of semiconducting WS2 thin films},
  number={3},
  volume={16},
  journal={Journal of Vacuum Science and Technology / A, Vacuum, Surfaces, and Films},
  pages={1239--1243},
  author={Ballif, Christophe and Regula, Manfred and Lévy, Francis and Burmeister, Frank and Schäfle, Claudia and Matthes, Thomas and Leiderer, Paul and Niedermann, Philippe and Gutmannsbauer, W. and Bucher, Ron}
}

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    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T17:57:37Z</dc:date>
    <dc:contributor>Regula, Manfred</dc:contributor>
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    <dc:contributor>Matthes, Thomas</dc:contributor>
    <dc:creator>Burmeister, Frank</dc:creator>
    <dc:contributor>Schäfle, Claudia</dc:contributor>
    <dc:creator>Leiderer, Paul</dc:creator>
    <dc:creator>Bucher, Ron</dc:creator>
    <dcterms:issued>1998</dcterms:issued>
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    <dc:contributor>Bucher, Ron</dc:contributor>
    <dc:contributor>Niedermann, Philippe</dc:contributor>
    <dc:creator>Regula, Manfred</dc:creator>
    <dc:creator>Matthes, Thomas</dc:creator>
    <dc:creator>Schäfle, Claudia</dc:creator>
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    <dc:creator>Lévy, Francis</dc:creator>
    <dc:contributor>Leiderer, Paul</dc:contributor>
    <dcterms:abstract xml:lang="eng">We report a new method to characterize the local electronic properties of polycrystalline semiconducting thin films. A lattice of triangular gold electrodes, with a typical area of 0.2 mm2, is evaporated on a p-type WS2 film. With the help of a conductive atomic force microscope, the current voltage characteristics of the contacts established between the gold electrodes and the WS2 film are measured. A linear dependence of the current versus voltage is  obtained on gold triangles in contact with grain edges. This indicates a high level of doping or degeneracy of the semiconductor at the grain edges. The electrodes deposited on flat WS2 crystallites form rectifying diodes with the underlying grains. Barrier heights of 0.56 0.74 eV and diode ideality factors between 1.15 and 2 are determined. Under illumination, open-circuit voltages up to 500 mV can be measured on some contacts. A short response time of the photocurrent is observed (100 ms), linked to trapping effects&lt;br /&gt;at grain boundaries.</dcterms:abstract>
    <dc:creator>Niedermann, Philippe</dc:creator>
    <dc:creator>Gutmannsbauer, W.</dc:creator>
    <dc:contributor>Burmeister, Frank</dc:contributor>
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    <dcterms:bibliographicCitation>First publ. in: Journal of Vacuum Science and Technology / A, Vacuum, Surfaces, and Films, Vol. 16 (1998), 3, pp. 1239-1243</dcterms:bibliographicCitation>
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    <dc:contributor>Ballif, Christophe</dc:contributor>
    <dc:creator>Ballif, Christophe</dc:creator>
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