@inproceedings{Boneberg1994-12-12Laser-4948,
  year={1994},
  doi={10.1117/12.195876},
  title={Laser-annealing of thin semiconductor films},
  number={2332},
  publisher={SPIE},
  series={SPIE Proceedings},
  booktitle={Second International Symposium on Advanced Laser Technologies},
  pages={2--15},
  editor={Pustovoy, Vladimir I. and Jelinek, Miroslav},
  author={Boneberg, Johannes and Nedelcu, Johann and Bucher, Ernst and Leiderer, Paul}
}

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    <dc:contributor>Nedelcu, Johann</dc:contributor>
    <dc:creator>Nedelcu, Johann</dc:creator>
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    <dc:contributor>Boneberg, Johannes</dc:contributor>
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    <dc:contributor>Leiderer, Paul</dc:contributor>
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    <dcterms:abstract xml:lang="eng">Optical reflectivity and transmissivity measurements have been used to investigate the dynamics of melting and recrystallisation of thin films of Si and Ge after laser-annealing with a ns Nd:YAG-laser pulse. We report on temperature dependent changes of the reflectivity of the liquid phase above and below the melting point and on various nucleation and solidification scenarios in thin film, depending on the energy density of the amding laser.</dcterms:abstract>
    <dc:creator>Bucher, Ernst</dc:creator>
    <dcterms:bibliographicCitation>First publ. in: Second International Symposium on Advanced Laser Technologies, Proceedings of SPIE 2332 (1993), pp. 1-14</dcterms:bibliographicCitation>
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