Dynamics of the solidification of laser-annealed Si thin films

Boneberg, Johannes; Nedelcu, Johann; Bender, Hubert; Leiderer, Paul

Dynamics of the solidification of laser-annealed Si thin films

Dateien

142_matsciengin_1993.pdfGröße: 326.93 KBDownloads: 385

Datum

1993

Autor:innen

Boneberg, Johannes

Nedelcu, Johann

Bender, Hubert

Leiderer, Paul

Open Access-Veröffentlichung

Open Access Green

Sammlungen

Physik

Publikationstyp

Zeitschriftenartikel

Publikationsstatus

Published

Erschienen in

Materials Science and Engineering / A. 1993, 173(1-2), pp. 347-350. Available under: doi: 10.1016/0921-5093(93)90242-7

Zusammenfassung

Nanosccond time-resolved reflectivity and transmission measurements are used for the observation of solidification phenomena, following incomplete or complete melting of thin Si films (d = 125 nm) by nanosecond laser pulses. Solidification is observed to proceed at the liquid-solid interface as long as the film is not melted completely. On complete melting of the film, nucleation in the liquid becomes important. Heat conduction into the quartz substrate rapidly cools the liquid, until after several tens of nanoseconds homogeneous nucleation of crystalline Si occurs at temperatures around 500 K below the melting point of Si. At even larger supercoolings our measurements indicate the transient formation of amorphous Si in addition to the formation of the crystalline phase.

Fachgebiet (DDC)

530 Physik

Zitieren

ISO 690

BONEBERG, Johannes, Johann NEDELCU, Hubert BENDER, Paul LEIDERER, 1993. Dynamics of the solidification of laser-annealed Si thin films. In: Materials Science and Engineering / A. 1993, 173(1-2), pp. 347-350. Available under: doi: 10.1016/0921-5093(93)90242-7

BibTex

@article{Boneberg1993Dynam-9101,
  year={1993},
  doi={10.1016/0921-5093(93)90242-7},
  title={Dynamics of the solidification of laser-annealed Si thin films},
  number={1-2},
  volume={173},
  journal={Materials Science and Engineering / A},
  pages={347--350},
  author={Boneberg, Johannes and Nedelcu, Johann and Bender, Hubert and Leiderer, Paul}
}

RDF

<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/9101">
    <dcterms:title>Dynamics of the solidification of laser-annealed Si thin films</dcterms:title>
    <dc:format>application/pdf</dc:format>
    <dcterms:rights rdf:resource="http://creativecommons.org/licenses/by-nc-nd/2.0/"/>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/9101/1/142_matsciengin_1993.pdf"/>
    <dc:creator>Leiderer, Paul</dc:creator>
    <dcterms:bibliographicCitation>First publ. in: Materials Science and Engineering / A, 173 (1993), 1-2, pp. 347-350</dcterms:bibliographicCitation>
    <dc:creator>Nedelcu, Johann</dc:creator>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:creator>Bender, Hubert</dc:creator>
    <dc:contributor>Bender, Hubert</dc:contributor>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dc:contributor>Nedelcu, Johann</dc:contributor>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dcterms:issued>1993</dcterms:issued>
    <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/9101"/>
    <dc:creator>Boneberg, Johannes</dc:creator>
    <dc:contributor>Boneberg, Johannes</dc:contributor>
    <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/9101/1/142_matsciengin_1993.pdf"/>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T17:53:37Z</dc:date>
    <dc:language>eng</dc:language>
    <dc:contributor>Leiderer, Paul</dc:contributor>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T17:53:37Z</dcterms:available>
    <dcterms:abstract xml:lang="eng">Nanosccond time-resolved reflectivity and transmission measurements are used for the observation of solidification phenomena, following incomplete or complete melting of thin Si films (d = 125 nm) by nanosecond laser pulses. Solidification is observed to proceed at the liquid-solid interface as long as the film is not melted completely. On complete melting of the film, nucleation in the liquid becomes important. Heat conduction into the quartz substrate rapidly cools the liquid, until after several tens of nanoseconds homogeneous nucleation of crystalline Si occurs at temperatures around 500 K below the melting point of Si. At even larger supercoolings our measurements indicate the transient formation of amorphous Si in addition to the formation of the crystalline phase.</dcterms:abstract>
    <dc:rights>Attribution-NonCommercial-NoDerivs 2.0 Generic</dc:rights>
  </rdf:Description>
</rdf:RDF>

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