Energy resolved ultrafast relaxation dynamics close to the band edge of low-temperature grown GaAs

Segschneider, Gregor; Dekorsy, Thomas; Kurz, Heinrich; Hey, Rudolf; Ploog, Klaus

Energy resolved ultrafast relaxation dynamics close to the band edge of low-temperature grown GaAs

Dateien

Energy_resolved_ultrafast_relaxation_dynamics_close_to_the_band_edge_of_low_temperature_grown_GaAs.pdfGröße: 66.56 KBDownloads: 377

Datum

1997

Autor:innen

Segschneider, Gregor

Dekorsy, Thomas

Kurz, Heinrich

Hey, Rudolf

Ploog, Klaus

Open Access-Veröffentlichung

Open Access Green

Sammlungen

Physik

Publikationstyp

Zeitschriftenartikel

Publikationsstatus

Published

Erschienen in

Applied Physics Letters. 1997, 71(19), pp. 2779-2781. Available under: doi: 10.1063/1.120131

Zusammenfassung

We investigate the relaxation dynamics of photogenerated carriers in low-temperature grown GaAs by femtosecond pump-probe measurements. The carrier dynamics in the vicinity of the band edge is disentangled in a two-color technique. The filling of shallow bound states close beneath the band edge is resolved. A temporal delay in the occupation of these states as well as a large optical nonlinearity points towards microscopic potential fluctuations forming these states.

Fachgebiet (DDC)

530 Physik

Zitieren

ISO 690

SEGSCHNEIDER, Gregor, Thomas DEKORSY, Heinrich KURZ, Rudolf HEY, Klaus PLOOG, 1997. Energy resolved ultrafast relaxation dynamics close to the band edge of low-temperature grown GaAs. In: Applied Physics Letters. 1997, 71(19), pp. 2779-2781. Available under: doi: 10.1063/1.120131

BibTex

@article{Segschneider1997Energ-4820,
  year={1997},
  doi={10.1063/1.120131},
  title={Energy resolved ultrafast relaxation dynamics close to the band edge of low-temperature grown GaAs},
  number={19},
  volume={71},
  journal={Applied Physics Letters},
  pages={2779--2781},
  author={Segschneider, Gregor and Dekorsy, Thomas and Kurz, Heinrich and Hey, Rudolf and Ploog, Klaus}
}

RDF

<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/4820">
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dcterms:title>Energy resolved ultrafast relaxation dynamics close to the band edge of low-temperature grown GaAs</dcterms:title>
    <dc:contributor>Kurz, Heinrich</dc:contributor>
    <dc:contributor>Hey, Rudolf</dc:contributor>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:creator>Kurz, Heinrich</dc:creator>
    <dc:language>eng</dc:language>
    <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/4820/1/Energy_resolved_ultrafast_relaxation_dynamics_close_to_the_band_edge_of_low_temperature_grown_GaAs.pdf"/>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T14:50:35Z</dcterms:available>
    <dc:contributor>Dekorsy, Thomas</dc:contributor>
    <dc:contributor>Ploog, Klaus</dc:contributor>
    <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/4820/1/Energy_resolved_ultrafast_relaxation_dynamics_close_to_the_band_edge_of_low_temperature_grown_GaAs.pdf"/>
    <dcterms:rights rdf:resource="http://creativecommons.org/licenses/by-nc-nd/2.0/"/>
    <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/4820"/>
    <dcterms:abstract xml:lang="eng">We investigate the relaxation dynamics of photogenerated carriers in low-temperature grown GaAs by femtosecond pump-probe measurements. The carrier dynamics in the vicinity of the band edge is disentangled in a two-color technique. The filling of shallow bound states close beneath the band edge is resolved. A temporal delay in the occupation of these states as well as a large optical nonlinearity points towards microscopic potential fluctuations forming these states.</dcterms:abstract>
    <dc:rights>Attribution-NonCommercial-NoDerivs 2.0 Generic</dc:rights>
    <dc:contributor>Segschneider, Gregor</dc:contributor>
    <dcterms:issued>1997</dcterms:issued>
    <dc:creator>Dekorsy, Thomas</dc:creator>
    <dcterms:bibliographicCitation>First publ. in: Applied Physics Letters 71 (1997), 19, pp. 2779-2781</dcterms:bibliographicCitation>
    <dc:creator>Hey, Rudolf</dc:creator>
    <dc:creator>Ploog, Klaus</dc:creator>
    <dc:format>application/pdf</dc:format>
    <dc:creator>Segschneider, Gregor</dc:creator>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T14:50:35Z</dc:date>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
  </rdf:Description>
</rdf:RDF>

Universitätsbibliographie

Nein