Silicon-on-insulator microcavity light emitting diodes with two Si/SiO2 Bragg reflectors
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2006
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Journal of Luminescence. 2006, 121, pp. 290-292. Available under: doi: 10.1016/j.jlumin.2006.08.006
Zusammenfassung
Light emitting pn-diodes were fabricated on a 5.8 μm thick n-type Si device layer of a silicon-on-insulator (SOI) wafer using standard silicon technology and boron implantation. The thickness of the Si device layer was reduced to 1.3 μm, corresponding to a 4λ-cavity for λ=1150 nm light. Electroluminescence spectra of these low Q-factor microcavities are presented. Addition of Si/SiO2 Bragg reflectors on the top and bottom of the device (3.5 and 5.5 pairs, respectively) is predicted to lead to spectral emission enhancement by ~270.
Zusammenfassung in einer weiteren Sprache
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530 Physik
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Silicon, Electroluminescence, Resonant cavity
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POTFAJOVA, Jaroslava, Jiaming SUN, Bernd SCHMIDT, Thomas DEKORSY, Wolfgang SKORUPA, Manfred HELM, 2006. Silicon-on-insulator microcavity light emitting diodes with two Si/SiO2 Bragg reflectors. In: Journal of Luminescence. 2006, 121, pp. 290-292. Available under: doi: 10.1016/j.jlumin.2006.08.006BibTex
@article{Potfajova2006Silic-8874, year={2006}, doi={10.1016/j.jlumin.2006.08.006}, title={Silicon-on-insulator microcavity light emitting diodes with two Si/SiO2 Bragg reflectors}, volume={121}, journal={Journal of Luminescence}, pages={290--292}, author={Potfajova, Jaroslava and Sun, Jiaming and Schmidt, Bernd and Dekorsy, Thomas and Skorupa, Wolfgang and Helm, Manfred} }
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