Subpicosecond carrier transport in GaAs surface-space-charge fields

Dekorsy, Thomas; Pfeifer, Torsten; Kütt, Waldemar; Kurz, Heinrich

Subpicosecond carrier transport in GaAs surface-space-charge fields

Dateien

Subpicosecond_carrier_transport_in_GaAs_surface_space_charge_fields.pdfGröße: 1.22 MBDownloads: 664

Datum

1993

Autor:innen

Dekorsy, Thomas

Pfeifer, Torsten

Kütt, Waldemar

Kurz, Heinrich

Open Access-Veröffentlichung

Open Access Green

Sammlungen

Physik

Publikationstyp

Zeitschriftenartikel

Publikationsstatus

Published

Erschienen in

Physical Review B. 1993, 47(7), pp. 3842-3849. Available under: doi: 10.1103/PhysRevB.47.3842

Zusammenfassung

Above-band-gap pulsed optical excitation of electron-hole pairs within the surface-space-charge region of semiconductors alters the surface-space-charge field via free-carrier transport. We report on the direct observation of this ultrafast transient screening and the associated charge-carrier transport by applying reflective electro-optic sampling (REOS) with subpicosecond time resolution to (100)-oriented GaAs surfaces. The REOS measurements performed under different initial surface field conditions and various optical excitation densities are compared to numerical simulations of hot-carrier transport, including the calculation of the optical response. The simulations, which are based on a simple drift-diffusion model for optically excited electron-hole pairs, are in quantitative agreement with the experiment. The strength and sign of the static built-in field can be determined and the carrier drift velocities can be derived on a subpicosecond time scale.

Fachgebiet (DDC)

530 Physik

Zitieren

ISO 690

DEKORSY, Thomas, Torsten PFEIFER, Waldemar KÜTT, Heinrich KURZ, 1993. Subpicosecond carrier transport in GaAs surface-space-charge fields. In: Physical Review B. 1993, 47(7), pp. 3842-3849. Available under: doi: 10.1103/PhysRevB.47.3842

BibTex

@article{Dekorsy1993Subpi-5299,
  year={1993},
  doi={10.1103/PhysRevB.47.3842},
  title={Subpicosecond carrier transport in GaAs surface-space-charge fields},
  number={7},
  volume={47},
  journal={Physical Review B},
  pages={3842--3849},
  author={Dekorsy, Thomas and Pfeifer, Torsten and Kütt, Waldemar and Kurz, Heinrich}
}

RDF

<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/5299">
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dcterms:abstract xml:lang="eng">Above-band-gap pulsed optical excitation of electron-hole pairs within the surface-space-charge region of semiconductors alters the surface-space-charge field via free-carrier transport. We report on the direct observation of this ultrafast transient screening and the associated charge-carrier transport by applying reflective electro-optic sampling (REOS) with subpicosecond time resolution to (100)-oriented GaAs surfaces. The REOS measurements performed under different initial surface field conditions and various optical excitation densities are compared to numerical simulations of hot-carrier transport, including the calculation of the optical response. The simulations, which are based on a simple drift-diffusion model for optically excited electron-hole pairs, are in quantitative agreement with the experiment. The strength and sign of the static built-in field can be determined and the carrier drift velocities can be derived on a subpicosecond time scale.</dcterms:abstract>
    <dc:creator>Dekorsy, Thomas</dc:creator>
    <dc:creator>Pfeifer, Torsten</dc:creator>
    <dc:contributor>Dekorsy, Thomas</dc:contributor>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T14:54:45Z</dcterms:available>
    <dcterms:rights rdf:resource="http://creativecommons.org/licenses/by-nc-nd/2.0/"/>
    <dc:contributor>Kütt, Waldemar</dc:contributor>
    <dc:format>application/pdf</dc:format>
    <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/5299/1/Subpicosecond_carrier_transport_in_GaAs_surface_space_charge_fields.pdf"/>
    <dc:contributor>Pfeifer, Torsten</dc:contributor>
    <dc:contributor>Kurz, Heinrich</dc:contributor>
    <dc:creator>Kütt, Waldemar</dc:creator>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T14:54:45Z</dc:date>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dc:language>eng</dc:language>
    <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/5299/1/Subpicosecond_carrier_transport_in_GaAs_surface_space_charge_fields.pdf"/>
    <dcterms:title>Subpicosecond carrier transport in GaAs surface-space-charge fields</dcterms:title>
    <dc:rights>Attribution-NonCommercial-NoDerivs 2.0 Generic</dc:rights>
    <dcterms:bibliographicCitation>First publ. in: Physical Review B 47 (1993), 7, pp. 3842-3849</dcterms:bibliographicCitation>
    <dcterms:issued>1993</dcterms:issued>
    <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/5299"/>
    <dc:creator>Kurz, Heinrich</dc:creator>
  </rdf:Description>
</rdf:RDF>

Universitätsbibliographie

Nein