Energy dependence of quantum dot formation by ion sputtering

Facsko, Stefan; Kurz, Heinrich; Dekorsy, Thomas

Energy dependence of quantum dot formation by ion sputtering

Dateien

Energy_dependence_of_quantum_dot_formation_by_ion_sputtering.pdfGröße: 314.03 KBDownloads: 401

Datum

2001

Autor:innen

Facsko, Stefan

Kurz, Heinrich

Dekorsy, Thomas

Open Access-Veröffentlichung

Open Access Green

Sammlungen

Physik

Publikationstyp

Zeitschriftenartikel

Publikationsstatus

Published

Erschienen in

Physical Review B. 2001, 63(16), 165329. Available under: doi: 10.1103/PhysRevB.63.165329

Zusammenfassung

Ordered quantum dot patterns are generated on GaSb and InSb surfaces due to a surface instability induced by Ar+-ion sputtering at normal incidence. The characteristic length of the generated patterns scales with the square root of the ion energy over the energy range of 75 1800 eV. This energy dependence is compared to the solutions of the isotropic Kuramoto-Sivashinsky equation and allows the determination of the lateral width of the energy distribution deposited by the incident ions in the very-low-energy range. We show that the observed energy dependence is in agreement with the linear continuum theory under the assumption that the dominant smoothing process is due to effective ion-induced diffusion without mass transport on the surface.

Fachgebiet (DDC)

530 Physik

Zitieren

ISO 690

FACSKO, Stefan, Heinrich KURZ, Thomas DEKORSY, 2001. Energy dependence of quantum dot formation by ion sputtering. In: Physical Review B. 2001, 63(16), 165329. Available under: doi: 10.1103/PhysRevB.63.165329

BibTex

@article{Facsko2001Energ-9305,
  year={2001},
  doi={10.1103/PhysRevB.63.165329},
  title={Energy dependence of quantum dot formation by ion sputtering},
  number={16},
  volume={63},
  journal={Physical Review B},
  author={Facsko, Stefan and Kurz, Heinrich and Dekorsy, Thomas},
  note={Article Number: 165329}
}

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