@article{Facsko1999Forma-8926,
  year={1999},
  doi={10.1126/science.285.5433.1551},
  title={Formation of ordered nanoscale semiconductor dots by ion sputtering},
  number={5433},
  volume={285},
  journal={Science},
  pages={1551--1553},
  author={Facsko, Stefan and Dekorsy, Thomas and Koerdt, Clemens and Trappe, Cyril and Kurz, Heinrich and Vogt, Alexander and Hartnagel, Hans L.}
}

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    <dc:contributor>Dekorsy, Thomas</dc:contributor>
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    <dcterms:abstract xml:lang="eng">A formation process for semiconductor quantum dots based on a surface instability induced by ion sputtering under normal incidence is presented. Crystalline dots 35 nanometers in diameter and arranged in a regular hexagonal lattice were produced on gallium antimonide surfaces. The formation mechanism relies on a natural self-organization mechanism that occurs during the erosion of surfaces, which is based on the interplay between roughening induced by ion sputtering and smoothing due to surface diffusion.</dcterms:abstract>
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    <dc:contributor>Hartnagel, Hans L.</dc:contributor>
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