- AutorIn
- Fabien Deprat
- F. Nemouchi
- C. Fenouillet-Beranger
- P. Batude
- B. Previtali
- M. Danielou
- P. Rodriguez
- S. Favier
- C. Fournier
- P. Gergaud
- M. Vinet
- Titel
- NiCo 10 at%: A promising silicide alternative to NiPt 15 at% for thermal stability improvement in 3DVLSI integration
- Zitierfähige Url:
- https://nbn-resolving.org/urn:nbn:de:bsz:ch1-qucosa-207112
- Quellenangabe
- AMC 2015 – Advanced Metallization Conference
- Quellenangabe
- AMC 2015 – Advanced Metallization Conference
- Abstract (EN)
- 3D VLSI with a CoolCube TM process allows vertically stacking several layers of devices with a unique connecting via density above a million/mm2. The thermal budget allowed to process the top transistor is currently limited by NiPt silicide stability of the bottom transistor. To extend the upper transistors thermal process window, Pre-Amorphization Implant (PAI) and Si-Capping were used to improve the stability of NiPt 15% on SiC:P and SiGe 30% :B accesses. While PAI enhances the silicide stability on SiC:P substrate from 600°C 2h to 700°C 2h, neither PAI nor Si-Capping improve silicide stability on SiGe 30% :B. To provide a solution for P accesses stability, NiCo 10% silicidation has been developed. Combined with PAI and Si-Capping, the germano-silicide offers a higher stability (up to 600°C 2h) than its NiPtSi 15% counterpart.
- Freie Schlagwörter (EN)
- NiCo, silicide, 3D sequential, thermal stability
- Klassifikation (DDC)
- 620
- Normschlagwörter (GND)
- Temperaturbeständigkeit, Silicide
- Publizierende Institution
- Technische Universität Chemnitz, Chemnitz
- URN Qucosa
- urn:nbn:de:bsz:ch1-qucosa-207112
- Veröffentlichungsdatum Qucosa
- 22.07.2016
- Dokumenttyp
- Konferenzbeitrag
- Sprache des Dokumentes
- Englisch