- AutorIn
- Jihperng Leu
- H.E. Tu
- W.Y. Chang
- C.Y. Chang
- Y.C. Chen
- W.C. Chen
- H.Y. Zhou
- Titel
- Low-k SiCxNy Etch-Stop/Diffusion Barrier Films for Back-End Interconnect Applications
- Zitierfähige Url:
- https://nbn-resolving.org/urn:nbn:de:bsz:ch1-qucosa-207243
- Quellenangabe
- AMC 2015 – Advanced Metallization Conference
- Quellenangabe
- AMC 2015 – Advanced Metallization Conference
- Abstract (EN)
- Lower k and low-leakage silicon carbonitride (SiCxNy ) films were fabricated using single precursor by using radio-frequency (RF) plasma-enhanced chemical vapor deposition (PECVD). We explored precursors with (1) cyclic-carbon-containing structures, (2) higher C/Si ratio, (3) multiple vinyl groups, as well as (4) the incorporation of porogen for developing low-k SiCxNy films as etch-stop/diffusion barrier (ES/DB) layer for copper interconnects in this study. SiCxNy films with k values between 3.0 and 3.5 were fabricated at T≦ 200 o C, and k~4.0-4.5 at 300-400 °C. Precursors with vinyl groups yielded SiCxNy films with low leakage, excellent optical transmittance and high mechanical strength due to the formation of cross-linked Si-(CH2)n-Si linkages.
- Freie Schlagwörter (EN)
- silicon carbonitride, low-k, etch-stop, diffusion barrier
- Klassifikation (DDC)
- 620
- Normschlagwörter (GND)
- Siliciumcarbonitrid, Silicium, Low-k-Dielektrikum, Diffusionsbarriere
- Publizierende Institution
- Technische Universität Chemnitz, Chemnitz
- Förder- / Projektangaben
- URN Qucosa
- urn:nbn:de:bsz:ch1-qucosa-207243
- Veröffentlichungsdatum Qucosa
- 22.07.2016
- Dokumenttyp
- Konferenzbeitrag
- Sprache des Dokumentes
- Englisch