Universität zu Köln

Choi, Minho, Choi, Heechae ORCID: 0000-0002-9390-6607, Ahn, Jinho and Kim, Yong Tae (2019). Understanding of relationship between dopant and substitutional site to develop novel phase-change materials based on In3SbTe2. Jpn. J. Appl. Phys., 58. BRISTOL: IOP PUBLISHING LTD. ISSN 1347-4065

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Abstract

For over a decade, phase-change materials have been widely researched using various materials and methods. Despite efforts, the design of novel materials is nowhere near reported. In this paper, we provide the data for doping in In3SbTe2 material with doping formation energy and distortion angle at In, Sb, and Te sites. Information on the 29 dopants reduces unnecessary time cost to select the dopant for the lST material since the dopant with the positive and big formation energy should be excluded. In addition, excessive dopants disturb the stable phase transition, for this reason, the approximate limit of concentration for doping is suggested with experimental results through XRD, TEM, and electrical characteristics. This study gives one guideline of the many methods to develop and discover the novel materials in terms of substitutional site and the amount of dopant. (C) 2019 The Japan Society of Applied Physics

Item Type:	Journal Article
Creators:	Creators Email ORCID ORCID Put Code Choi, Minho UNSPECIFIED UNSPECIFIED UNSPECIFIED Choi, Heechae UNSPECIFIED orcid.org/0000-0002-9390-6607 UNSPECIFIED Ahn, Jinho UNSPECIFIED UNSPECIFIED UNSPECIFIED Kim, Yong Tae UNSPECIFIED UNSPECIFIED UNSPECIFIED
URN:	urn:nbn:de:hbz:38-152003
DOI:	10.7567/1347-4065/aafa6a
Journal or Publication Title:	Jpn. J. Appl. Phys.
Volume:	58
Date:	2019
Publisher:	IOP PUBLISHING LTD
Place of Publication:	BRISTOL
ISSN:	1347-4065
Language:	English
Faculty:	Unspecified
Divisions:	Unspecified
Subjects:	no entry
Uncontrolled Keywords:	Keywords Language GENERALIZED GRADIENT APPROXIMATION; CRYSTALLIZATION; DYNAMICS; GROWTH Multiple languages Physics, Applied Multiple languages
Refereed:	Yes
URI:	http://kups.ub.uni-koeln.de/id/eprint/15200