Usachov, Dmitry Yu ORCID: 0000-0003-0390-0007, Fedorov, Alexander V., Petukhov, Anatoly E. ORCID: 0000-0001-9362-3589, Vilkov, Oleg Yu, Rybkin, Artem G., Otrokov, Mikhail M., Arnau, Andres, Chulkov, Evgueni V., Yashina, Lada V., Farjam, Mani, Adamchuk, Vera K., Senkovskiy, Boris V. ORCID: 0000-0003-1443-6780, Laubschat, Clemens and Vyalikh, Denis V. (2015). Epitaxial B-Graphene: Large-Scale Growth and Atomic Structure. ACS Nano, 9 (7). S. 7314 - 7323. WASHINGTON: AMER CHEMICAL SOC. ISSN 1936-086X

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Abstract

Embedding foreign atoms or molecules in graphene has become the key approach in its functionalization and is intensively used for tuning its structural and electronic properties. Here, we present an efficient method based on chemical vapor deposition for large scale growth of boron-doped graphene (B-graphene) on Ni(111) and Co(0001) substrates using carborane molecules as the precursor. It is shown that up to 19 at.% of boron can be embedded in the graphene matrix and that a planar C-B sp(2) network is formed. It is resistant to air exposure and widely retains the electronic structure of graphene on metals. The large-scale and local structure of this material has been explored depending on boron content and substrate. By resolving individual impurities with scanning tunneling microscopy we have demonstrated the possibility for preferential substitution of carbon with boron in one of the graphene sublattices (unbalanced sublattice doping) at low doping level on the Ni(111) substrate. At high boron content the honeycomb lattice of B-graphene is strongly distorted, and therefore, it demonstrates no unballanced sublattice doping.

Item Type: Journal Article
Creators:
CreatorsEmailORCIDORCID Put Code
Usachov, Dmitry YuUNSPECIFIEDorcid.org/0000-0003-0390-0007UNSPECIFIED
Fedorov, Alexander V.UNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Petukhov, Anatoly E.UNSPECIFIEDorcid.org/0000-0001-9362-3589UNSPECIFIED
Vilkov, Oleg YuUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Rybkin, Artem G.UNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Otrokov, Mikhail M.UNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Arnau, AndresUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Chulkov, Evgueni V.UNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Yashina, Lada V.UNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Farjam, ManiUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Adamchuk, Vera K.UNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Senkovskiy, Boris V.UNSPECIFIEDorcid.org/0000-0003-1443-6780UNSPECIFIED
Laubschat, ClemensUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Vyalikh, Denis V.UNSPECIFIEDUNSPECIFIEDUNSPECIFIED
URN: urn:nbn:de:hbz:38-400120
DOI: 10.1021/acsnano.5b02322
Journal or Publication Title: ACS Nano
Volume: 9
Number: 7
Page Range: S. 7314 - 7323
Date: 2015
Publisher: AMER CHEMICAL SOC
Place of Publication: WASHINGTON
ISSN: 1936-086X
Language: English
Faculty: Faculty of Mathematics and Natural Sciences
Divisions: Faculty of Mathematics and Natural Sciences > Department of Physics > Institute of Physics II
Subjects: no entry
Uncontrolled Keywords:
KeywordsLanguage
NITROGEN-DOPED GRAPHENE; ELECTRONIC-STRUCTURE; MONOLAYER GRAPHENE; TRANSPORT-PROPERTIES; BORON; PERFORMANCE; NI(111)Multiple languages
Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, MultidisciplinaryMultiple languages
Refereed: Yes
URI: http://kups.ub.uni-koeln.de/id/eprint/40012

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