@inproceedings{Schiele2014Conta-31267,
  year={2014},
  doi={10.4229/EUPVSEC20142014-2AV.2.5},
  title={Contacting and recombination analysis of boron emitters via etch-back for advanced n-Type Si solar cells},
  isbn={3-936338-34-5},
  issn={2196-100X},
  publisher={WIP},
  address={München},
  booktitle={29th European PV Solar Energy Conference and Exhibition : proceedings of the international conference held in Amsterdam, The Netherlands, 22 - 26 September 2014},
  pages={825--829},
  editor={WIP and ed. by T. P. Bokhoven ...},
  author={Schiele, Yvonne and Hahn, Giso and Terheiden, Barbara}
}

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    <dcterms:title>Contacting and recombination analysis of boron emitters via etch-back for advanced n-Type Si solar cells</dcterms:title>
    <dc:contributor>Terheiden, Barbara</dc:contributor>
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    <dc:contributor>Schiele, Yvonne</dc:contributor>
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    <dc:creator>Schiele, Yvonne</dc:creator>
    <dc:language>eng</dc:language>
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    <dc:creator>Terheiden, Barbara</dc:creator>
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    <dcterms:abstract xml:lang="eng">In p-type c-Si solar cells, selective emitter structures generated by emitter etch-back (EEB) have been introduced in recent years in order to minimize electrical losses in the phosphorous emitter being one of the dominant factors limiting the performance of standard screen-printed p-type c-Si solar cells. In this work, a homogeneously or selectively etched-back boron emitter is demonstrated to provide additional benefits yielding an enhanced conversion efficiency in n-type Si solar cells. By means of subsequent B-EEB, contacting and recombination properties of B emitters dependent on their sheet resistance, surface concentration, and profile depth are studied indicating the latter to be the crucial parameter. Based on this, the characteristics of the optimal B emitter regarding low saturation current density and low specific contact resistivity are determined for the cases of homogeneous and selective etch-back. By employing the selectively etched-back B emitter in initial solar cells, a VOC gain of 5 mV and a significant shunting reduction compared with homogeneously doped devices is achieved.</dcterms:abstract>
    <dc:contributor>Hahn, Giso</dc:contributor>
    <dc:creator>Hahn, Giso</dc:creator>
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