@article{Gerke2015Morph-31702,
  year={2015},
  doi={10.1016/j.egypro.2015.07.112},
  title={Morphology and Hydrogen in Passivating Amorphous Silicon Layers},
  volume={77},
  journal={Energy Procedia},
  pages={791--798},
  author={Gerke, Sebastian and Becker, Hans-Werner and Rogalla, Detlef and Hahn, Giso and Job, Reinhart and Terheiden, Barbara}
}

<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/31702">
    <dcterms:issued>2015</dcterms:issued>
    <dc:contributor>Job, Reinhart</dc:contributor>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2015-09-08T07:41:39Z</dc:date>
    <dc:contributor>Rogalla, Detlef</dc:contributor>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2015-09-08T07:41:39Z</dcterms:available>
    <dc:creator>Job, Reinhart</dc:creator>
    <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/31702/1/Gerke_0-300018.pdf"/>
    <dc:creator>Becker, Hans-Werner</dc:creator>
    <dcterms:abstract xml:lang="eng">Hydrogenated intrinsic amorphous silicon ((i)°a-Si:H) can be grown by plasma-enhanced chemical vapor deposition with a non-columnar or columnar morphology. Nuclear resonant reaction analysis and corresponding effective stopping cross section analysis indicate a dependency of hydrogen effusion on the morphology of the (i)°a-Si:H layer as well as the doping type and concentration of the c-Si wafer. The doping type of the c-Si wafer also affects the growth of the amorphous network. It is found that for moderately doped p-type c-Si a non-columnar (i)°a-Si:H layer yields a significantly better and more stable passivation already during thermal anneal and illumination, while for passivating n-type c-Si a columnar layer is recommended. Passivating lowly doped c-Si by (i)°a-Si:H is not dependent on morphology. Combining different (i)°a-Si:H morphologies to a multi-layer stack improves the quality of surface passivation. Hydrogen embedded in a well passivating but hydrogen-permeable columnar layer supports good surface passivation when covered by a non-columnar layer, featuring a fast growing layer acting as a hydrogen barrier and enhancing surface passivation quality.</dcterms:abstract>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dcterms:title>Morphology and Hydrogen in Passivating Amorphous Silicon Layers</dcterms:title>
    <dc:creator>Hahn, Giso</dc:creator>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dcterms:rights rdf:resource="http://creativecommons.org/licenses/by-nc-nd/4.0/"/>
    <dc:language>eng</dc:language>
    <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/31702/1/Gerke_0-300018.pdf"/>
    <dc:creator>Gerke, Sebastian</dc:creator>
    <dc:creator>Terheiden, Barbara</dc:creator>
    <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/31702"/>
    <dc:creator>Rogalla, Detlef</dc:creator>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:rights>Attribution-NonCommercial-NoDerivatives 4.0 International</dc:rights>
    <dc:contributor>Hahn, Giso</dc:contributor>
    <dc:contributor>Becker, Hans-Werner</dc:contributor>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:contributor>Gerke, Sebastian</dc:contributor>
    <dc:contributor>Terheiden, Barbara</dc:contributor>
  </rdf:Description>
</rdf:RDF>