@inproceedings{Fischer2018Gette-45199,
  year={2018},
  doi={10.4229/35thEUPVSEC20182018-2AV.1.31},
  title={Gettering and passiviation of advanced high performance multicrystalline silicon material},
  isbn={978-3-936338-50-8},
  publisher={WIP},
  address={München},
  booktitle={35th European Photovoltaic Solar Energy Conference and Exhibition},
  pages={531--534},
  editor={Verlinden, Pierre},
  author={Fischer, Christian and Lindroos, Jeanette and Zuschlag, Annika and Hahn, Giso}
}

<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/45199">
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2019-02-25T12:26:08Z</dc:date>
    <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/45199/3/Fischer_2-10jg69nplcc5h1.pdf"/>
    <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/45199/3/Fischer_2-10jg69nplcc5h1.pdf"/>
    <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/>
    <dc:contributor>Hahn, Giso</dc:contributor>
    <dc:rights>terms-of-use</dc:rights>
    <dcterms:title>Gettering and passiviation of advanced high performance multicrystalline silicon material</dcterms:title>
    <dc:creator>Zuschlag, Annika</dc:creator>
    <dc:language>eng</dc:language>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2019-02-25T12:26:08Z</dcterms:available>
    <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/45199"/>
    <dc:creator>Hahn, Giso</dc:creator>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dcterms:abstract xml:lang="eng">High performance multicrystalline (HP mc) silicon material with local effective minority charge carrier lifetime above 1 ms is a promising pathway to increase efficiency in mc silicon solar cells. Critical for the success of the material is the behavior of the material quality during solar cell processing. Phosphorus gettering during emitter formation for example is known to reduce contaminations and thus to enhance carrier lifetime in multicrystalline material. In contrast, also an increase of charge carrier recombination was recently reported for P-gettering in HP mcSi. Therefore, a detailed analysis of different P-gettering profiles and te mperature effects combined with several surface passivations (SiN&lt;sub&gt;x&lt;/sub&gt;:H, AlO&lt;sub&gt;x&lt;/sub&gt; and iodine-ethanol) is performed to gain further understanding of this phenomenon. Especially changes in eff due to different thermal load and in-diffusing hydrogen from SiN&lt;sub&gt;x&lt;/sub&gt;:H are investigated.</dcterms:abstract>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dc:contributor>Lindroos, Jeanette</dc:contributor>
    <dc:contributor>Fischer, Christian</dc:contributor>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:creator>Lindroos, Jeanette</dc:creator>
    <dc:creator>Fischer, Christian</dc:creator>
    <dc:contributor>Zuschlag, Annika</dc:contributor>
    <dcterms:issued>2018</dcterms:issued>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
  </rdf:Description>
</rdf:RDF>