@article{Acker2022-09Forma-57866,
  year={2022},
  doi={10.1002/pssa.202200142},
  title={Formation Dynamics of BH and GaH‐Pairs in Crystalline Silicon during Dark Annealing},
  number={17},
  volume={219},
  issn={1862-6300},
  journal={Physica Status Solidi (A) - Applications and Materials Science},
  author={Acker, Yanik and Simon, Jochen and Herguth, Axel},
  note={Article Number: 2200142}
}

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    <dc:contributor>Acker, Yanik</dc:contributor>
    <dcterms:title>Formation Dynamics of BH and GaH‐Pairs in Crystalline Silicon during Dark Annealing</dcterms:title>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2022-06-29T11:02:03Z</dc:date>
    <dcterms:abstract xml:lang="eng">In crystalline silicon, atomic hydrogen released from hydrogen dimers forms acceptor-hydrogen pairs during annealing in the dark at elevated temperatures. In this study the formation of boron-hydrogen (BH) and gallium-hydrogen (GaH) pairs in 1 cm silicon is investigated at temperatures ranging from 140 to 220°C. Acceptor-hydrogen concentrations in the low 10&lt;sup&gt;14&lt;/sup&gt;cm&lt;sup&gt;−3&lt;/sup&gt; range are quantified by means of highly sensitive resistance measurements. GaH pairs are generally found to form faster than BH pairs. Arrhenius analysis shows a difference in activation energy (BH: 1.20eV, GaH: 1.04eV) while the trial frequency is the same (∼4×10&lt;sup&gt;8&lt;/sup&gt;s&lt;sup&gt;−1&lt;/sup&gt;).</dcterms:abstract>
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    <dc:contributor>Herguth, Axel</dc:contributor>
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