@article{Gawlik2022-05Diode-56962,
  year={2022},
  doi={10.1002/pssr.202100537},
  title={Diode Laser-Crystallization for the Formation of Passivating Contacts for Solar Cells},
  number={5},
  volume={16},
  issn={1862-6254},
  journal={Physica Status Solidi (RRL) - Rapid Research Letters},
  author={Gawlik, Annett and Glatthaar, Raphael and Dellith, Andrea and Jia, Guobin and Dellith, Jan and Terheiden, Barbara and Plentz, Jonathan},
  note={Article Number: 2100537}
}

<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/56962">
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dc:language>eng</dc:language>
    <dc:creator>Gawlik, Annett</dc:creator>
    <dc:creator>Plentz, Jonathan</dc:creator>
    <dcterms:issued>2022-05</dcterms:issued>
    <dcterms:abstract xml:lang="eng">A new method of diode laser treatment of passivating contacts for solar cells application based on electron beam evaporated highly doped amorphous silicon (a-Si) layers deposited on solar-grade Czochralski wafers with SiOx tunneling layers is investigated. In a first step, an interface oxide is grown and a highly doped n-type a-Si layer is deposited on both sides by electron beam evaporation. In a next step, the laser treatment is applied. Two different scanning speeds of 15 and 20 mm s&lt;sup&gt;−1&lt;/sup&gt; are used. Electron backscattering diffraction and quasi-steady-state photo conductance measurements indicate that the a-Si layer can be crystallized without breaking up the thin oxide layer. To determine the best parameters, the lifetime and the implied open-circuit voltage for each laser power are measured. The first results show a fitted lifetime of 4.06 ms and an implied open-circuit voltage up to 711 mV after a passivation step.</dcterms:abstract>
    <dc:contributor>Plentz, Jonathan</dc:contributor>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/56962/1/Gawlik_2-mu8375qw885l8.pdf"/>
    <dc:rights>Attribution-NonCommercial 4.0 International</dc:rights>
    <dc:creator>Glatthaar, Raphael</dc:creator>
    <dc:creator>Jia, Guobin</dc:creator>
    <dc:contributor>Gawlik, Annett</dc:contributor>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dc:creator>Terheiden, Barbara</dc:creator>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2022-03-23T10:12:31Z</dcterms:available>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2022-03-23T10:12:31Z</dc:date>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dcterms:title>Diode Laser-Crystallization for the Formation of Passivating Contacts for Solar Cells</dcterms:title>
    <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/56962/1/Gawlik_2-mu8375qw885l8.pdf"/>
    <dc:creator>Dellith, Jan</dc:creator>
    <dc:creator>Dellith, Andrea</dc:creator>
    <dc:contributor>Glatthaar, Raphael</dc:contributor>
    <dc:contributor>Dellith, Andrea</dc:contributor>
    <dc:contributor>Dellith, Jan</dc:contributor>
    <dc:contributor>Jia, Guobin</dc:contributor>
    <dc:contributor>Terheiden, Barbara</dc:contributor>
    <dcterms:rights rdf:resource="http://creativecommons.org/licenses/by-nc/4.0/"/>
    <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/56962"/>
  </rdf:Description>
</rdf:RDF>