Towards a fast determination of the hydrogen concentration in thin passivating a-Si:H layers using GD-OES

Steffens, Jonathan; Hahn, Giso; Terheiden, Barbara

Towards a fast determination of the hydrogen concentration in thin passivating a-Si:H layers using GD-OES

Dateien

Steffens_2-yrm5yzr8bb97.pdfGröße: 361.17 KBDownloads: 271

Datum

2018

Open Access-Veröffentlichung

Open Access Green

Sammlungen

Physik

Publikationstyp

Beitrag zu einem Konferenzband

Publikationsstatus

Published

Erschienen in

BALLIF, Christophe, ed. and others. SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics. Melville, NY: AIP Publishing, 2018, 020021. AIP Conference Proceedings. 1999,1. ISSN 0094-243X. eISSN 1551-7616. ISBN 978-0-7354-1715-1. Available under: doi: 10.1063/1.5049260

Zusammenfassung

In this contribution, the measurement of the hydrogen concentration in thin passivating amorphous silicon (a-Si:H) layers using Glow Discharge Optical Emission Spectroscopy (GD-OES) is suggested. Usually GD-OES hydrogen measurements suffer from additional signals from atmospheric contaminations, especially from H₂O desorbed on the surfaces of such thin layers. This issue is addressed by the deposition of a hydrogen-free copper buffer layer on top, which provides a delay between sputtering the sample surface and the a-Si:H layer itself. Thus the signals from the atmospheric contaminations and from the a-Si:H layer itself are separated. The contamination-free hydrogen signals of the thin a-Si:H layers are eventually calibrated to average hydrogen concentrations.

Fachgebiet (DDC)

530 Physik

Konferenz

SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics, 19. März 2018 - 21. März 2018, Lausanne

Zitieren

ISO 690

STEFFENS, Jonathan, Giso HAHN, Barbara TERHEIDEN, 2018. Towards a fast determination of the hydrogen concentration in thin passivating a-Si:H layers using GD-OES. SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics. Lausanne, 19. März 2018 - 21. März 2018. In: BALLIF, Christophe, ed. and others. SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics. Melville, NY: AIP Publishing, 2018, 020021. AIP Conference Proceedings. 1999,1. ISSN 0094-243X. eISSN 1551-7616. ISBN 978-0-7354-1715-1. Available under: doi: 10.1063/1.5049260

BibTex

@inproceedings{Steffens2018Towar-43619,
  year={2018},
  doi={10.1063/1.5049260},
  title={Towards a fast determination of the hydrogen concentration in thin passivating a-Si:H layers using GD-OES},
  number={1999,1},
  isbn={978-0-7354-1715-1},
  issn={0094-243X},
  publisher={AIP Publishing},
  address={Melville, NY},
  series={AIP Conference Proceedings},
  booktitle={SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics},
  editor={Ballif, Christophe},
  author={Steffens, Jonathan and Hahn, Giso and Terheiden, Barbara},
  note={Article Number: 020021}
}

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