@article{Fenning2013Impro-25030,
  year={2013},
  doi={10.1063/1.4808310},
  title={Improved iron gettering of contaminated multicrystalline silicon by high temperature phosphorus diffusion},
  number={21},
  volume={113},
  issn={0021-8979},
  journal={Journal of Applied Physics},
  author={Fenning, David P. and Zuschlag, Annika and Bertoni, Mariana and Lai, Barry and Hahn, Giso and Buonassisi, Tonio},
  note={Article Number: 214504}
}

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    <dc:contributor>Hahn, Giso</dc:contributor>
    <dc:contributor>Buonassisi, Tonio</dc:contributor>
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    <dcterms:abstract xml:lang="eng">The efficacy of higher-temperature gettering processes in reducing precipitated iron concentrations is assessed by synchrotron-based micro-X-ray fluorescence. By measuring the same grain boundary before and after phosphorus diffusion in a set of wafers from adjacent ingot heights, the reduction in size of individual precipitates is measured as a function of gettering temperature in samples from the top of an ingot intentionally contaminated with iron in the melt. Compared to a baseline 820 °C phosphorus diffusion, 870 °C and 920 °C diffusions result in a larger reduction in iron-silicide precipitate size. Minority carrier lifetimes measured on wafers from the same ingot heights processed with the same treatments show that the greater reduction in precipitated metals is associated with a strong increase in lifetime. In a sample contaminated with both copper and iron in the melt, significant iron gettering and complete dissolution of detectable copper precipitates is observed despite the higher total metal concentration. Finally, a homogenization pre-anneal in N2 at 920 °C followed by an 820 °C phosphorus diffusion produces precipitate size reductions and lifetimes similar to an 870 °C phosphorus diffusion without lowering the emitter sheet resistance.</dcterms:abstract>
    <dcterms:title>Improved iron gettering of contaminated multicrystalline silicon by high temperature phosphorus diffusion</dcterms:title>
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    <dc:contributor>Bertoni, Mariana</dc:contributor>
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    <dc:creator>Bertoni, Mariana</dc:creator>
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    <dc:contributor>Fenning, David P.</dc:contributor>
    <dcterms:bibliographicCitation>Journal of Applied Physics ; 113 (2013), 21. - 214504</dcterms:bibliographicCitation>
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    <dc:creator>Zuschlag, Annika</dc:creator>
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