Impurity-assisted tunneling in graphene

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2007
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Titov, M.
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Europhysics Letters. 2007, 79(17004), pp. 1-6. Available under: doi: 10.1209/0295-5075/79/17004
Zusammenfassung

The electric conductance of a strip of undoped graphene increases in the presence of a disorder potential, which is smooth on atomic scales. The phenomenon is attributed to impurityassisted resonant tunneling of massless Dirac fermions. Employing the transfer matrix approach we demonstrate the resonant character of the conductivity enhancement in the presence of a single impurity. We also calculate the two-terminal conductivity for the model with one-dimensional fluctuations of disorder potential by a mapping onto a problem of Anderson localization.

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ISO 690TITOV, M., 2007. Impurity-assisted tunneling in graphene. In: Europhysics Letters. 2007, 79(17004), pp. 1-6. Available under: doi: 10.1209/0295-5075/79/17004
BibTex
@article{Titov2007Impur-4921,
  year={2007},
  doi={10.1209/0295-5075/79/17004},
  title={Impurity-assisted tunneling in graphene},
  number={17004},
  volume={79},
  journal={Europhysics Letters},
  pages={1--6},
  author={Titov, M.}
}
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