@article{Sun2004Effic-4833,
  year={2004},
  doi={10.1063/1.1808488},
  title={Efficient ultraviolet electroluminescence from a Gd-implanted silicon metal oxide semiconductor device},
  number={16},
  volume={85},
  journal={Applied Physics Letters},
  pages={3387--3389},
  author={Sun, Jiaming and Skorupa, Wolfgang and Dekorsy, Thomas and Helm, Manfred and Rebohle, Lars and Gebel, Thoralf}
}

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    <dc:contributor>Rebohle, Lars</dc:contributor>
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    <dcterms:abstract xml:lang="eng">Strong ultraviolet electroluminescence with an external quantum efficiency above 1% is observed from an indium-tin oxide/SiO2:Gd/Si metal oxide semiconductor structure. The SiO2:Gd active layer is prepared by thermal oxidation followed by Gd+ implantation and annealing. The electroluminescence spectra show a sharp peak at 316 nm from the 6P 7/2 to 8S 7/2 transition of Gd3+ ions. Micrometer-sized electroluminescent devices are demonstrated.</dcterms:abstract>
    <dc:contributor>Gebel, Thoralf</dc:contributor>
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    <dcterms:bibliographicCitation>First publ. in: Applied Physics Letters 85 (2004), 16, pp. 3387-3389</dcterms:bibliographicCitation>
    <dc:creator>Skorupa, Wolfgang</dc:creator>
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