@inproceedings{Skorupa2005earth-9345,
  year={2005},
  title={Rare earth ion implantation for silicon based light emission : from infrared to ultraviolet},
  booktitle={Materials Research Society Symposium V},
  author={Skorupa, Wolfgang and Sun, Jiaming and Prucnal, Slawomir and Rebohle, Lars and Gebel, Thoralf and Nazarov, Alexei N. and Osiyuk, Igor N. and Dekorsy, Thomas and Helm, Manfred}
}

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    <dc:creator>Dekorsy, Thomas</dc:creator>
    <dcterms:bibliographicCitation>First publ. in: Materials Research Society Symposium V, 866 (2005)</dcterms:bibliographicCitation>
    <dc:creator>Sun, Jiaming</dc:creator>
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    <dc:language>eng</dc:language>
    <dc:creator>Helm, Manfred</dc:creator>
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    <dc:creator>Rebohle, Lars</dc:creator>
    <dc:contributor>Prucnal, Slawomir</dc:contributor>
    <dc:creator>Nazarov, Alexei N.</dc:creator>
    <dcterms:title>Rare earth ion implantation for silicon based light emission : from infrared to ultraviolet</dcterms:title>
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    <dc:creator>Prucnal, Slawomir</dc:creator>
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    <dc:rights>Attribution-NonCommercial-NoDerivs 2.0 Generic</dc:rights>
    <dc:contributor>Osiyuk, Igor N.</dc:contributor>
    <dc:contributor>Dekorsy, Thomas</dc:contributor>
    <dcterms:issued>2005</dcterms:issued>
    <dc:contributor>Nazarov, Alexei N.</dc:contributor>
    <dc:contributor>Rebohle, Lars</dc:contributor>
    <dcterms:abstract xml:lang="eng">Using ion implantation different rare earth luminescent centers (Gd3+, Tb3+, Eu3+, Ce3+, Tm3+, Er3+) were created into the silicon dioxide layer of a purpose-designed Metal Oxide Silicon (MOS) capacitor with advanced electrical performance, further called a MOS-light emitting device (MOSLED). The silicon dioxide layer did not contain silicon nanoclusters. Efficient electroluminescence was obtained from UV to infrared with a transparent top electrode made of indium-tin oxide. The electroluminescence properties were studied with respect to the luminescence spectra, decay time, impact excitation, cross relaxation (Tb3+), and power efficiency. Top values of the efficiency of 0.3 % corresponding to external quantum efficiencies well above the percent range were reached. The electrical properties of these devices such as current-voltage and charge trapping characteristics, were also evaluated. Moreover, we demonstrate photo- and electroluminescence in correlation to charge trapping characteristics for Er-rich MOSLEDs with a varying silicon cluster content. Finally, application aspects to the field of biosensing will be discussed.</dcterms:abstract>
    <dc:creator>Osiyuk, Igor N.</dc:creator>
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    <dc:contributor>Skorupa, Wolfgang</dc:contributor>
    <dc:creator>Gebel, Thoralf</dc:creator>
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    <dc:contributor>Sun, Jiaming</dc:contributor>
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    <dc:contributor>Helm, Manfred</dc:contributor>
    <dc:creator>Skorupa, Wolfgang</dc:creator>
    <dc:contributor>Gebel, Thoralf</dc:contributor>
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